Search arXiv⌕ Search
Home/Archive/arXiv

arXiv · 2505.24471

Crystal Growth & Physical Property Characterization of Mixed Topological Insulator BiSbTe$_3$

Dinesh Kumar·Kapil Kumar·N. K. Karn·Ganesh Gurjar·V. P. S. Awana·Sudesh
View original source ↗Read source document ↗Export metadata ↓

Abstract

This article reports the synthesis of a single crystalline mixed topological insulator (TI) BiSbTe$_3$ and its detailed structural and magneto-transport properties. The single crystalline samples of BiSbTe$_3$ are grown by the melt-growth process and characterized by X-ray diffraction (XRD), Energy dispersive X-ray analysis (EDAX) and Raman spectroscopy. The single crystal XRD peaks dictated the growth direction along the c-axis. The Raman spectrum elucidated the characteristic peaks of the mixed topological insulator. The broadening of Raman peaks exhibited the formation of Te-Bi-Te and Te-Sb-Te bonds and associated vibrational modes. The single crystals are characterized by magneto-transport measurements down to 2 K and up to 14 Tesla transverse magnetic field. The residual resistance ratio (R200 K/R0 K) is found to be 3.64, which endorses the metallic nature of the synthesized crystal. The relative resistance turns out to be higher for the mixed TI than the pure TIs i.e., Bi$_2$Te$_3$ or Sb$_2$Te$_3$. The lower Debye temperature (82.64 K) of BiSbTe$_3$ connotes the presence of effective electron-phonon interaction at quite low temperatures in comparison to pure TI, which explains the observed suppression in magnetoresistance (MR) for the mixed TI. At 2 K, an MR of 150 percent is observed for BiSbTe$_3$, which is suppressed in contrast to the pure TIs i.e., Bi$_2$Te$_3$ or Sb$_2$Te$_3$. Though the MR% is suppressed significantly, its non-saturating linear behavior indicates the topological nature of the studied mixed TI. The modified Hikami-Larkin-Nagaoka (HLN) equation analysis of magneto-conductivity of mixed TI revealed that the conductivity has not only a surface states driven 2D component but also contributions from the bulk charge carriers and quantum scattering.

Explore related subjects

cond-mat.mtrl-scicond-mat.str-el

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Dinesh Kumar, Kapil Kumar, N. K. Karn, Ganesh Gurjar, V. P. S. Awana, Sudesh. 2025-05-30. Crystal Growth & Physical Property Characterization of Mixed Topological Insulator BiSbTe$_3$. https://arxiv.org/abs/2505.24471

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Electronic States, Spin-Orbit Coupling and Magnetism in Germanium 60° Dislocations

Defects in semiconductors have recently attracted renewed interest owing to their potential in novel quantum applications. Here we investigate the electronic and magnetic properties induced by 60° dislocations in Ge. Using large-scale DFT calculations, we determine the band structure for both the shuffle and glide sets in their lowest-energy configurations. The band structure for the shuffle set reveals defect-induced dispersive bands localized within the band gap near the $Γ$ point, whereas for the glide set, we observe strong overlap with the conduction band. Defect-induced band splitting evident away from $Γ$ reveals Rashba-Dresselhaus spin-orbit coupling, an effect previously reported only for screw dislocations. Remarkably, we find evidence that specific dislocation arrangements can stabilize antiferromagnetic ordering with sizable local magnetic moments and considerable exchange splitting between opposite spin states. These results uncover rich physics in Ge dislocations through the combination of spin-orbit coupling and magnetic ordering, potentially enabling novel defect-based functionalities in Ge devices.

cond-mat.mtrl-sci↗
arXiv2026

Thermal Hall resistivity and transverse entropy production in a phonon gas

Most theories of the phonon thermal Hall effect ignore phonon-phonon interactions. Here, by recalling the Senftleben-Beenakker effect in molecular gases, we argue that a magnetic field, by influencing collisions between neutral non-chiral [quasi-]particles, can induce a Hall response. Our study of two insulators with distinct crystal structures, layered honeycomb WS$_2$ and ferroelectric perovskite LiNbO$_3$, finds that $κ_{xx}$ and $κ_{xy}$ peak at nearly the same temperature in both materials, as reported in other insulators. We show that the amplitude of transverse thermal \emph{resistivity} in clean and simple insulators is of the order of $|W_\perp/B|\simeq \frac{e}{k_B u}$, where $e$ and $k_B$ are fundamental constants and $u$ is the binding energy density of the crystal. In complex and dirty insulators, $|W_\perp/B|$ is much larger and has a significant temperature dependence. Nevertheless, the peak thermal Hall \textit{angle} in all insulators remains roughly the same.

cond-mat.mtrl-sci↗
arXiv2026

First-principles calculations of electronic structure

The emergence of high-mobility at provides a fertile platform for exploring emergent quantum phenomena and next-generation oxide electronics. Here, using first-principles density functional theory (DFT) calculations, we uncover the microscopic origin of the formed at the interface between insulators. Despite both constituents being insulating in bulk, the heterostructure develops robust metallicity at the interface, in agreement with experimental observations. This charge redistribution stabilizes at the interface. The electronic states forming enforcing carrier motion strictly within the interfacial plane. Remarkably, the spin-up parabolic band hosting the 2DEG exhibits an exceptionally small effective mass -- indicating the potential for significantly enhanced carrier mobility. Furthermore, the calculated interfacial electron density exceeds that of by nearly an order of magnitude, consistent with experimental measurement. These findings identify the heterostructure as a compelling platform for realizing and open new avenues for engineering correlated oxide interfaces for quantum electronic applications.

cond-mat.mtrl-sci↗