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arXiv · 2506.01861

Proximity-induced Rashba spin-orbit interaction in BaMnO$_\text{3}|$KTaO$_\text{3}$ heterostructure for antiferromagnetic spintronics

Vivek Kumar·Nirmal Ganguli
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Abstract

Antiferromagnetic spintronics, a promising technology for ultra-fast electronic devices, faces several challenges, including the lack of materials simultaneously hosting robust antiferromagnetism and adequate Rashba-like interaction. We design a heterostructure of BaMnO$_3|$KTaO$_3$ with the idea of proximity-inducing strong Rashba spin-orbit interaction from KTaO$_3$ part to BaMnO$_3$ part, where the latter is already a robust antiferromagnet. Within our DFT calculations, the heterostructure reveals BaMnO$_3$ bands near the Fermi level with a significant magnetic moment per Mn atom and a decent ordering temperature. Further, the BaMnO$_3$ bands in the heterostructure exhibit linear Rashba interaction with a sizable Rashba coefficient, owing to its proximity to KTaO$_3$. Our work can motivate future research by demonstrating the road map to proximity-induced Rashba interaction for antiferromagnetic spintronics.

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Vivek Kumar, Nirmal Ganguli. 2026-07-24. Proximity-induced Rashba spin-orbit interaction in BaMnO$_\text{3}|$KTaO$_\text{3}$ heterostructure for antiferromagnetic spintronics. https://doi.org/10.1103/jtym-lpxt

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