Dimerization of Ag adatoms on Si(100) at surprisingly low temperature due to adatom migration on top of Si-dimer rows

Abstract

The puzzling experimental observations of Ag addimer formation on the Si(100) surface upon vapor deposition at low temperature, even as low as 140 K, reported by Huang et al. [Phys. Chem. Chem. Phys. 2021, 23, 4161], is explained by facile thermal migration on top of the Si dimer rows, while diffusion is inactive once an Ag adatom lands in one of the optimal binding sites in between dimer rows. The previously hypothesized transient mobility due to the hot spot formed as an Ag atom lands on the Si surface is found not to contribute significantly to mobility and dimer formation. The experimental conditions are simulated by a combination of classical dynamics calculations of the deposition events, systematic searches of saddle points representing transition states for thermally activated events and kinetic Monte Carlo simulations of long timescale evolution of the system over a temperature range from 100 K to 300 K. While the calculated energy barriers for diffusion parallel and perpendicular to the Si dimer rows are found to be nearly equal, indicating isotropic diffusion, the simulations show highly anisotropic diffusion, as the optimal migration mechanism involves multiple hops of Ag adatoms on top of Si dimer rows. Impinging Ag atoms are found to have a 90% chance of landing on top of a dimer row and while the hot spot created cools down too fast for transient mobility to play an important role, the energy barrier for thermally activated hops along the dimer row is low enough for migration to be active even at 100 K. A migrating Ag adatom can dimerise with another Ag adatom sitting at a stable binding site in between rows or another adatom on top of the same row. The simulations for deposition at 140 K show that most of the deposited Ag atoms end up forming dimers.