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arXiv · 2507.01850

1/ f noise and two-level systems in MBE-grown Al thin films

Abstract

Aluminum thin films are essential to the functionalities of electronic and quantum devices, where two-level systems (TLS) can degrade device performance. MBE-grown Al films may appeal to these applications due to their low TLS densities. We studied the energy distributions of TLS densities, g(E), in 10-nm-thick MBE-grown and electron-beam evaporated Al films through 1/f noise measurements between 80 and 360 K. At 300 K, the noise magnitudes in MBE-grown films are about three times lower than in the electron-beam evaporated films, corresponding to the g(E) values about ten times lower in the former than in the latter. Compared with previously established observations, we identified that the 1/f noise was generated by thermally activated TLS at grain boundaries.

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Shouray Kumar Sahu, Yen-Hsun Glen Lin, Kuan-Hui Lai, Chao-Kai Cheng, Chun-Wei Wu, Elica Anne Heredia, Ray-Tai Wang, Yen-Hsiang Lin, Juainai Kwo, Minghwei Hong, Juhn-Jong Lin, Sheng-Shiuan Yeh. 2025-07-02. 1/ f noise and two-level systems in MBE-grown Al thin films. https://doi.org/10.1063/5.0273345

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