SPLENDOR: a novel detector platform to search for light dark matter with narrow-gap semiconductors

Abstract

We present the design and current status of SPLENDOR, a novel detector platform that combines narrow-gap semiconductor targets with low-noise charge readout to achieve sensitivity to dark matter energy deposits well below the eV scale. SPLENDOR is designed to be a modular and scalable system able to accommodate different target materials and signal readout technologies. SPLENDOR's present strategy entails: (i) the use of strongly correlated f-electron semiconductors with anisotropic electronic structures to enable not only sub-eV energy thresholds, but also directional sensitivity to the incoming dark matter flux, allowing for signal-background discrimination via daily modulation, and (ii) custom charge readout based on cryogenic high-electron-mobility transistor (cryoHEMT) amplifiers approaching single-electron resolution. We report on the selection and characterization of Eu$_5$In$_2$Sb$_6$ as the target material for SPLENDOR's first prototype detector, as well as the development and calibration of the prototype amplifier chain, achieving a measured charge resolution of 20$\pm$7 electrons in silicon test samples, consistent with predicted performance. This provides a demonstration of the detector architecture, which is now ready for deployment in a dark matter search campaign to deliver SPLENDOR's first science results. Finally, we present estimates of sensitivity reach in the parameter space of athermally produced relic dark matter under high- and low-background environments, and for various amplifier technology upgrades with increasing performance, including planned quantum sensing upgrades in order to achieve our ultimate goal of sub-electron resolution in optimized systems. SPLENDOR provides a novel approach to dark matter direct detection, combining quantum sensing with material's design to open new avenues of exploration in the sub-MeV mass range of dark matter parameter space.