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arXiv · 2509.02987

High-$Q$ membrane resonators using ultra-high-stress crystalline TiN films

Yuki Matsuyama·Shotaro Shirai·Ippei Nakamura·Masao Tokunari·Hirotaka Terai·Yuji Hishida·Ryo Sasaki·Yusuke Tominaga·Atsushi Noguchi
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Abstract

High-quality-factor ($Q$) mechanical resonators are essential components for precise sensing and control of mechanical motion at a quantum level. While amorphous materials such as SiN have been widely used in high-$Q$ mechanical resonators utilizing stress-induced dissipation dilution, crystalline materials have emerging potential to achieve higher quality factors by combining low intrinsic loss and high tensile stress. In this paper, we demonstrate high-Q membrane resonators using ultra-high-stress crystalline TiN. Our membrane resonator exhibits a tensile stress exceeding 2.3 GPa and a quality factor of $Q = 8.0 \times 10^6$ at 2.2 K. By estimating the dilution factor, we infer that our TiN resonator has a intrinsic quality factor comparable to that of SiN membrane resonators. With its ultra-high stress and crystalline properties, our TiN films can serve as a powerful tool for opto- and electromechanical systems, offering highly dissipation-diluted mechanical resonators.

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Yuki Matsuyama, Shotaro Shirai, Ippei Nakamura, Masao Tokunari, Hirotaka Terai, Yuji Hishida, Ryo Sasaki, Yusuke Tominaga, Atsushi Noguchi. 2025-09-03. High-$Q$ membrane resonators using ultra-high-stress crystalline TiN films. https://doi.org/10.1063/5.0300550

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