Search arXiv⌕ Search

arXiv · 2509.05909

Learning Magnetic Order Classification from Large-Scale Materials Databases

Abstract

The reliable identification of magnetic ground states remains a major challenge in high-throughput materials databases, where density functional theory (DFT) workflows often converge to ferromagnetic (FM) solutions. Here, we partially address this challenge by developing machine-learning classifiers trained on experimentally validated MAGNDATA magnetic materials, leveraging a limited number of simple compositional, structural, and electronic descriptors sourced from the Materials Project Database. Our propagation-vector classifiers achieve accuracies above 92%, outperforming a recent equivariant-neural-network study on a differently constructed dataset in reliably distinguishing between zero and nonzero propagation-vector structures, and exposing a systematic ferromagnetic bias inherent to the Materials Project database for more than 6840 candidate materials. In parallel, LightGBM and XGBoost models trained directly on the Materials Project labels achieve accuracies of 82% and 85%, respectively (with macro-F1 average scores of 66% and 63%), proving useful for large-scale screening for magnetic classes, when refined by MAGNDATA-trained classifiers. These results underscore the role of machine-learning techniques as corrective and exploratory tools, enabling more trustworthy databases and accelerating progress toward the identification of materials with various properties.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Ahmed E. Fahmy. 2026-09-15. Learning Magnetic Order Classification from Large-Scale Materials Databases. https://doi.org/10.1103/qftr-2tfm

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Electronic States, Spin-Orbit Coupling and Magnetism in Germanium 60° Dislocations

Defects in semiconductors have recently attracted renewed interest owing to their potential in novel quantum applications. Here we investigate the electronic and magnetic properties induced by 60° dislocations in Ge. Using large-scale DFT calculations, we determine the band structure for both the shuffle and glide sets in their lowest-energy configurations. The band structure for the shuffle set reveals defect-induced dispersive bands localized within the band gap near the $Γ$ point, whereas for the glide set, we observe strong overlap with the conduction band. Defect-induced band splitting evident away from $Γ$ reveals Rashba-Dresselhaus spin-orbit coupling, an effect previously reported only for screw dislocations. Remarkably, we find evidence that specific dislocation arrangements can stabilize antiferromagnetic ordering with sizable local magnetic moments and considerable exchange splitting between opposite spin states. These results uncover rich physics in Ge dislocations through the combination of spin-orbit coupling and magnetic ordering, potentially enabling novel defect-based functionalities in Ge devices.

cond-mat.mtrl-sci↗

Thermal Hall resistivity and transverse entropy production in a phonon gas

Most theories of the phonon thermal Hall effect ignore phonon-phonon interactions. Here, by recalling the Senftleben-Beenakker effect in molecular gases, we argue that a magnetic field, by influencing collisions between neutral non-chiral [quasi-]particles, can induce a Hall response. Our study of two insulators with distinct crystal structures, layered honeycomb WS$_2$ and ferroelectric perovskite LiNbO$_3$, finds that $κ_{xx}$ and $κ_{xy}$ peak at nearly the same temperature in both materials, as reported in other insulators. We show that the amplitude of transverse thermal \emph{resistivity} in clean and simple insulators is of the order of $|W_\perp/B|\simeq \frac{e}{k_B u}$, where $e$ and $k_B$ are fundamental constants and $u$ is the binding energy density of the crystal. In complex and dirty insulators, $|W_\perp/B|$ is much larger and has a significant temperature dependence. Nevertheless, the peak thermal Hall \textit{angle} in all insulators remains roughly the same.

cond-mat.mtrl-sci↗

First-principles calculations of electronic structure

The emergence of high-mobility at provides a fertile platform for exploring emergent quantum phenomena and next-generation oxide electronics. Here, using first-principles density functional theory (DFT) calculations, we uncover the microscopic origin of the formed at the interface between insulators. Despite both constituents being insulating in bulk, the heterostructure develops robust metallicity at the interface, in agreement with experimental observations. This charge redistribution stabilizes at the interface. The electronic states forming enforcing carrier motion strictly within the interfacial plane. Remarkably, the spin-up parabolic band hosting the 2DEG exhibits an exceptionally small effective mass -- indicating the potential for significantly enhanced carrier mobility. Furthermore, the calculated interfacial electron density exceeds that of by nearly an order of magnitude, consistent with experimental measurement. These findings identify the heterostructure as a compelling platform for realizing and open new avenues for engineering correlated oxide interfaces for quantum electronic applications.

cond-mat.mtrl-sci↗