Bulk Ferroelectric Heterostructures: Imprinted Actuators

Abstract

Domain switching is the cornerstone of ferroelectric materials. Most associated functionalities can be tuned via domain switching, including but not limited to piezoelectricity, thermal conductivity, domain wall conductivity and topological structures. However, achieving the full potential of reversible ferroelectric domain switching is restricted by the incomplete access to the entire ferroelectric texture space, as well as the memory effects and energy dissipation associated with the hysteretic nature of ferroelectrics. The manipulation of domain switching behaviour is moderately attainable in epitaxial heterostructures by exploiting the valence or lattice mismatch at heterointerfaces, which is generally constrained by the necessity for two dimensional architectures. In this study, domain-engineered bulk ferroelectric heterostructures (DE-BFH), constructed via elemental partitioning, are employed to unleash full potential of bulk ferroelectrics, providing comprehensive control of domain switching characteristics and adjustable reversibility within the entire range of ferroelectric texture space. Exemplar DE-BFH ceramics exhibit unprecedented enhancement in reversible electrostrain and stability in both axial and shear modes, including a record high peak to peak shear strain up to 0.9% at intermediate field levels, confirmed by digital image correlation measurements and in-situ synchrotron XRD studies. The advancement of domain switching behaviour in DE-BFH could also promote development of new types of lead-free piezoelectric devices, including actuators, energy harvesters, multiple state memory devices, and domain wall switch. Moreover, design concept of DE-BFH could contribute to the creation of distinctive ferroelastic, ferromagnetic, and multiferroic materials by broadening its scope to the entire ferroic family, encompassing polycrystalline, single-crystal, and thin-film forms.