Search arXiv⌕ Search
Home/Archive/arXiv

arXiv · 2509.21877

Ab initio study of magnetoresistance effect in $\mathrm{Mn_{3}Sn}/\mathrm{MgO}/\mathrm{Mn_{3}Sn}$ antiferromagnetic tunnel junction

Katsuhiro Tanaka·Yuta Toga·Susumu Minami·Satoru Nakatsuji·Takuya Nomoto·Takashi Koretsune·Ryotaro Arita
View original source ↗Read source document ↗Export metadata ↓

Abstract

The antiferromagnets with the time-reversal symmetry broken magnetic structures possess a finite spin splitting in the momentum space, and may contribute to a realization of a finite tunnel magnetoresistance (TMR) effect even with magnets with zero net spin polarization. In this paper, we study the TMR effect with the noncollinear antiferromagnet $\mathrm{Mn_{3}Sn}$ whose inverse $120^{\circ}$ antiferromagnetic order breaks the time-reversal symmetry. In particular, we employ the representative barrier material $\mathrm{MgO}$ as the tunnel insulator, and calculate the TMR effect in the $\mathrm{Mn_{3}Sn}(01\bar{1}0)/\mathrm{MgO}(110)/\mathrm{Mn_{3}Sn}$ magnetic tunnel junctions (MTJs), which has an optimal geometry for the spin-orbit torque switching of the magnetic configurations. We show that a finite TMR ratio reaching $\gtrsim 1000\%$ appears in the $\mathrm{Mn_{3}Sn}/\mathrm{MgO}/\mathrm{Mn_{3}Sn}$ MTJs, which is due to the spin splitting properties of $\mathrm{Mn_{3}Sn}$ in the momentum space combined with the screening effect of $\mathrm{MgO}$.

Explore related subjects

cond-mat.mes-hallcond-mat.mtrl-sci

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Katsuhiro Tanaka, Yuta Toga, Susumu Minami, Satoru Nakatsuji, Takuya Nomoto, Takashi Koretsune, Ryotaro Arita. 2026-06-22. Ab initio study of magnetoresistance effect in $\mathrm{Mn_{3}Sn}/\mathrm{MgO}/\mathrm{Mn_{3}Sn}$ antiferromagnetic tunnel junction. https://doi.org/10.1103/xt7z-sf3x

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Benzo-bis(imidazole) self-assembled monolayers molecular junctions in meta or para conformation: effects of protonation on the electrical and thermal conductances

We report the thermal conductances of molecular junctions made of self-assembled monolayers of benzo-bis(imidazole) molecules, without side groups or functionalized with two phenylamine side groups. In the two cases, when the molecules are connected to the electrodes by thiol anchoring groups in the meta-position, the thermal conductance is decreased compared to the same molecules connected in the para-position (ca. 16-29 nW/K and ca. 37-40 nW/K, respectively) in agreement with the theoretically predicted phonon interference effect in molecular junctions. Upon protonation, the thermal conductances of the meta-connected molecular junction increase by about 50% (reversible behavior upon deprotonation). The fact that only the thermal conductance of the meta-connected molecular junction is sensitive to the protonation/deprotonation is tentatively related to modifications of the structural organization of the molecules in the monolayer, which modifies the thermal conductance at the molecule/electrode interfaces. The electrical conductance is lower for the meta-connected molecule than for the para-connected one, due to destructive quantum interferences, as expected and reported for other molecular junctions. The conductance further decreases (reversibly) upon protonation. The energy position of the molecular orbital involved in the electron transport is not modified by the protonation and the decrease in current is related to changes in the molecule organization in the monolayer, which modulate the electronic coupling energy at the molecule/electrode interfaces.

cond-mat.mes-hall↗
arXiv2026

Hydrodynamics of two-dimensional electrons due to scattering by disorder

The hydrodynamic regime of electron transport, induced by fast inter-electron collisions, was discovered in high-quality nanostructures in recent ten years. However, signs of hydrodynamic transport, primarily, the giant negative magnetoresistance, were observed even at very low temperatures, when electron-electron scattering is too weak to affect the transport. To address this puzzle, here we develop a theory of mixed, hydrodynamic and non-Markovian, magnetotransport of two-dimensional electrons at zero temperature in samples with weak but still important disorder. Namely, we account for both the memory effects at electron scattering by localized defects in magnetic field and an unconventional viscosity effect due to electron scattering by defects in bulk and by rough sample edges. Solution of the model yields a strong negative magnetoresistance, which exhibits at zero magnetic field a sharp maximum in narrower samples or a blunt maximum in wider samples. This and other our results explain various properties of the giant negative magnetoresistance observed on ultra-high-quality GaAs quantum wells, thereby we apparently reveal the nature of low-temperature magnetotransport in these systems.

cond-mat.mes-hall↗
arXiv2026

Symplectic Hopf Insulator: Delicate Topology in Bosonic Bogoliubov-de Gennes Systems

Recent advances in topological phases have highlighted the role of symplectic (Krein-space) topology in the classification of bosonic Bogoliubov-de Gennes (BBdG) systems. In this work, we construct a BBdG realization of Hopf topology, which we dub the symplectic Hopf insulator, starting from a microscopic Bose-Hubbard generalization of the Moore-Ran-Wen model with weak on-site interactions treated within a Bogoliubov approximation. The resulting BBdG system admits a symplectic Hopf invariant, which we show to be integer-quantized for isolated bands. We establish that this topology is intrinsically delicate, requiring exactly two bosonic modes per unit cell, while remaining robust against weak interactions over a range of mass parameters. Upon terminating the three-dimensional insulator at a boundary, we find topologically protected in-gap surface states at finite excitation energy, whose protection is itself delicate. Our results establish the symplectic Hopf insulator as a robust yet delicate topological phase in weakly interacting bosonic systems lying beyond the tenfold-way classification.

cond-mat.mes-hall↗