Enhanced thermal stability of inverted perovskite solar cells by bulky passivation with pyridine-functionalized triphenylamine

Ekaterina A. Ilicheva; Irina A. Chuyko; Lev O. Luchnikov; Polina K. Sukhorukova; Nikita S. Saratovsky; Anton A. Vasilev; Luiza Alexanyan; Anna A. Zarudnyaya; Dmitri Yu. Dorofeev; Sergey S. Kozlov; Andrey P. Morozov; Dmitry S. Muratov; Yuriy N. Luponosov; Danila S. Saranin

arXiv · 2510.08401

Enhanced thermal stability of inverted perovskite solar cells by bulky passivation with pyridine-functionalized triphenylamine

Ekaterina A. Ilicheva·Irina A. Chuyko·Lev O. Luchnikov·Polina K. Sukhorukova·Nikita S. Saratovsky·Anton A. Vasilev·Luiza Alexanyan·Anna A. Zarudnyaya·Dmitri Yu. Dorofeev·Sergey S. Kozlov·Andrey P. Morozov·Dmitry S. Muratov·Yuriy N. Luponosov·Danila S. Saranin

View original source ↗Read source document ↗Export metadata ↓

Abstract

Despite competitive efficiency compared to Si solar cells and relevant stability at near room temperatures the rapid degradation at elevated temperatures remains the critical obstacle for exploitation of perovskite photovoltaics. In this work, a 4-(pyridin-4-yl)triphenylamine (TPA-Py) with pyridine anchor group was employed for inter-grain bulk modification of double-cation CsCH(NH2)2PbI3 perovskite absorbers to enhance thermal stability. Through coordination and dipole-dipole interactions, nitrogen-containing fragments (diphenylamine and pyridine) of TPA-Py passivate uncoordinated cations and improve the phase resilience of perovskite films against segregation. This resulted in a power conversion efficiency of 21.3% with a high open-circuit voltage of 1.14 V. Notable impact of self-assembled monolayer incorporated into the bulk of perovskite film manifested in huge improvement of thermal stability at 85°C (ISOS-D-2). TPA-Py modification improved extended the T80 lifetime to ~600 h compared to only 200 h for the reference under harsh heating stress in ambient conditions. In-depth analysis using photoinduced voltage transients and admittance spectroscopy after different stress periods revealed the screening of ion migration (0.45 eV) for devices with TPA-Py. This work offers an important understanding of the bulk modification of microcrystalline perovskite absorbers and guide for robust design of bulk and buried interfaces in highly efficient perovskite solar cells.

Explore related subjects

cond-mat.mtrl-sci cond-mat.mes-hall physics.app-ph

Keep this discovery

Explore connections, maps & timelines

BibTeX RIS

Ekaterina A. Ilicheva, Irina A. Chuyko, Lev O. Luchnikov, Polina K. Sukhorukova, Nikita S. Saratovsky, Anton A. Vasilev, Luiza Alexanyan, Anna A. Zarudnyaya, Dmitri Yu. Dorofeev, Sergey S. Kozlov, Andrey P. Morozov, Dmitry S. Muratov, Yuriy N. Luponosov, Danila S. Saranin. 2025-10-09. Enhanced thermal stability of inverted perovskite solar cells by bulky passivation with pyridine-functionalized triphenylamine. https://arxiv.org/abs/2510.08401

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Towards ultra-scaled nanoelectronics using the zipper material system $Bi_2O_2Se/Bi_2SeO_5$

Two-dimensional (2D) materials could overcome the scaling bottleneck of nanoelectronics by enabling atomically thin channels, superior electrostatic control, and reduced short-channel effects. However, progress is limited by the lack of semiconductor–insulator interfaces being simultaneously scalable, stable, and reliable. Conventional 2D interfaces are often low quality or require transferring dissimilar materials, limiting reproducibility and scalability. We show that the zipper heterostructure formed by the high-mobility 2D semiconductor Bi 2 O 2 Se and its native high- κ oxide Bi 2 SeO 5 addresses these challenges, providing an atomically sharp, chemically matched interface with excellent electrostatics and promising scaling potential. We further present the first comprehensive multiscale assessment of Bi 2 O 2 Se/Bi 2 SeO 5 transistors targeting thermal stability, reliability, and scalability by linking atomic-scale structure and defects to device-level behavior across four transistor generations (top-gated, fin, and two gate-all-around architectures). Benchmarking against IRDS-2035 targets indicates that Bi 2 O 2 Se/Bi 2 SeO 5 devices could deliver high drive current with low gate leakage under aggressive scaling, potentially surpassing the targets in the upper-bound region of the sensitivity analysis. Finally, we identify oxygen-related oxide defects as the dominant origin of hysteresis consistent with a beneficial role of encapsulation and oxygen-rich annealing. Together, our findings support the potential of this zipper material system as a technologically-credible and manufacturing-relevant platform for future nanoelectronics.

cond-mat.mtrl-sci↗

arXiv2026

Influence of Heterogeneity on the Response of Architected Metamaterials

Architected metamaterials like foams and lattices exhibit complex responses governed by microstructural instabilities, localization, and phase-transition-like phenomena. Their behavior is further affected by heterogeneities inherent in their microstructure often caused through manufacturing processes. In this study we extend a gradient-enhanced, nonlocal continuum formulation to incorporate stochastic material heterogeneity through Gaussian random fields imposed on selected constitutive parameters. The framework enables independent control of both the amplitude and spatial correlation of material fluctuations while preserving thermodynamic consistency and regularization of localization. It also introduces a characteristic lengthscale ratio between the nonlocal and correlation lengthscales, that enables modeling at the limit of random or spatially correlated microstructures. Finite element simulations of confined compression and indentation show that heterogeneity fundamentally alters phase nucleation, localization morphology, and macroscopic response. Overall, the proposed framework provides a unified approach for linking stochastic material variability to instability-driven mechanics in architected metamaterials, enabling improved understanding of imperfection sensitivity, stability and design. It showcases how heterogeneity alone can influence characteristic features of the response, such as stability, slope of the plateau region, and elimination of the initial elastic regime.

cond-mat.mtrl-sci↗

arXiv2026

Structural, electronic, and optical properties of hexagonal GeSn from density functional theory

Unlike cubic GeSn, which undergoes an indirect-to-direct bandgap transition only above a finite Sn concentration, lonsdaleite (2H) germanium is an intrinsic direct-gap semiconductor. We employ first-principles density functional theory to investigate the structural, electronic, and optical properties of 2H-Ge$_{1-x}$Sn$_{x}$ random alloys in the dilute Sn regime ($x \le 0.10$). Substitutional disorder is modeled using 48-atom special quasirandom structure (SQS) supercells, and the coherent effective band structure is recovered via spectral band unfolding. We show that the semiconducting alloy configurations retain a direct bandgap at the $Γ$ point, with a moderate, nearly linear reduction of the bandgap in the dilute regime that shifts the fundamental absorption edge toward the mid-infrared. As the gap approaches zero, its calculated value becomes increasingly sensitive to the atomic configuration and supercell size. Evaluation of the optical transition matrix elements shows that the polarization anisotropy characteristic of pristine 2H-Ge remains observable under dilute Sn alloying. Although alloy disorder relaxes the crystal selection rules, the band edge response remains dominated by light polarized perpendicular to the crystal $c$ axis, whereas the parallel component remains weaker. These results identify dilute hexagonal GeSn as a tunable direct-gap system with a strongly polarization-dependent optical response in the infrared.

cond-mat.mtrl-sci↗