Intermediate-Band Formation in Tm3+-doped Ca2SnO4: A Wide-Gap Oxide Host for Visible-Light Absorption and Energy Applications

Abstract

Rare earth doping is an effective way to convert chemically stable oxides into multifunctional materials with coupled electronic, optical, and magnetic properties. We present first principles calculations of pristine and Tm3+ doped Ca2SnO4 to understand how localized 4f states change the structural, electronic, magnetic, and optical behavior of the host. Pristine Ca2SnO4 is a mechanically stable, wide band gap insulator with mostly ionic covalent bonding and diamagnetic character. Replacing Ca2+ with Tm3+ introduces several key changes: (i) localized Tm 4f states create intermediate levels inside the wide gap, reducing the optical band gap; (ii) exchange and spin orbit interactions generate strong local magnetic moments and spin asymmetry near the conduction band; (iii) electron localization function analysis shows enhanced covalency and electron pockets that stabilize luminescent centers; and (iv) the optical response shows visible range absorption, refractive index features, and low energy plasmon peaks while maintaining high energy dielectric stability. These effects make Tm doped Ca2SnO4 a mechanically robust, optically tunable, and magnetically active oxide phosphor suitable for red emission, intermediate band photovoltaics, and spin photon coupling. More broadly, our results show how targeted rare earth substitution can enable multifunctionality in wide gap stannates and guide the design of next generation spintronic photonic oxides.