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arXiv · 2511.08989

High-throughput, Non-Destructive, Three-Dimensional Imaging of GaN Threading Dislocations with in-Plane Burgers Vector Component via Phase-Contrast Microscopy

Yukari Ishiakwa·Ryo Hattori·Yongzhao Yao·Daiki Katsube·Koji Sato
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Abstract

We demonstrate a nondestructive, high-throughput method for observing dislocations in GaN (0001) using phase-contrast microscopy (PCM). The PCM images (359x300 $μ$m$^2$) analyzed in this study were acquired with an exposure time of 3 ms per image. The one-to-one correspondence between threading dislocation (TD) contrasts in PCM images and the corresponding contrasts in multiphoton excitation photoluminescence (MPPL) images provides clear evidence that PCM can detect TDs with in-plane Burgers vector components. The contrast shape in PCM reflects the inclination of dislocations with respect to the surface normal: dot contrasts correspond to vertical dislocations, whereas line contrasts correspond to inclined dislocations. By shifting the focal plane from the top surface to the back surface, the three-dimensional propagation paths of dislocations can be visualized. The PCM image obtained represents a projection of threading dislocations within a thickness of approximately 43 $μ$m. Dislocations spaced as close as 1.3 $μ$m can be individually resolved. In addition, the capability of PCM to detect scratches, subsurface scratches, facet boundaries, and voids was demonstrated. This study establishes PCM as a versatile and laboratory-accessible technique for three-dimensional, nondestructive characterization of dislocations and other defects in wide-bandgap semiconductors.

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Yukari Ishiakwa, Ryo Hattori, Yongzhao Yao, Daiki Katsube, Koji Sato. 2026-04-24. High-throughput, Non-Destructive, Three-Dimensional Imaging of GaN Threading Dislocations with in-Plane Burgers Vector Component via Phase-Contrast Microscopy. https://arxiv.org/abs/2511.08989

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