arXiv · 2512.08046
Chirality-induced magnetoresistance in hybrid organic-inorganic perovskite semiconductors
Abstract
The combination of semiconducting properties and synthetically tunable chirality in chiral metal halide semiconductors (CMHS) offer a compelling platform for room temperature control over electronic spin properties, leveraging effects such as chirality-induced spin selectivity (CISS) for the development of new opto-spintronic functionalities. We report room-temperature CISS-induced magnetoresistance (CISS-MR) exceeding 100% for spin valves in a configuration consisting of a ferromagnet (FM), tunneling barrier, and CMHS. The high CISS-MR is attributed to interfacial spin-selective tunneling barrier induced by the chirality, which can produce current dissymmetry factors that surpass the limit imposed by the Julli\`ere model governed by the intrinsic spin polarization of the adjacent FM contact. The CISS-MR exhibits a strong dependence on the CMHS composition, revealing a structure-property relationship between CISS and structural chirality. The observed exceptionally large tunneling MR response differentiates from a subtle anisotropic MR arising from the proximity effect at the FM/CMHS interface in the absence of a tunneling barrier. Our study provides insights into charge-to-spin interconversion in chiral semiconductors, offering materials design principles to control and enhance CISS response and utilize it in functional platforms.
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Md Azimul Haque, Pius Markus Theiler, Ian A. Leahy, Steven P. Harvey, Jeiwan Tan, Matthew P Hautzinger, Margherita Taddei, Aeron McConnell, Andrew Greider, Andrew H. Comstock, Yifan Dong, Kirstin Alberi, Yuan Ping, Peter C. Sercel, Joseph M. Luther, Dali Sun, Matthew C. Beard. 2025-12-08. Chirality-induced magnetoresistance in hybrid organic-inorganic perovskite semiconductors. https://arxiv.org/abs/2512.08046
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