Room temperature intrinsic anomalous Hall effect in disordered half-metallic ferromagnetic quaternary Heusler alloy CoRuFeSi

Abstract

Quaternary Heusler alloys offer a versatile platform for engineering magnetic and topological transport phenomena through chemical flexibility and tunable disorder. Here, we report a comprehensive experimental and theoretical investigation of the magnetic, magnetotransport, and anomalous Hall properties of the quaternary Heusler alloy CoRuFeSi. The compound crystallizes in the LiMgPdSn-type structure with significant Co--Ru antisite disorder and exhibits soft ferromagnetism with a saturation magnetization of $4.21~μ_{\mathrm{B}}/\mathrm{f.u.}$ at low temperature and a Curie temperature well above room temperature. Hall measurements reveal a robust anomalous Hall effect persisting up to 300~K, with an anomalous Hall conductivity of $\sim 74$~S/cm that is nearly temperature independent. Scaling analysis demonstrates that the anomalous Hall response is dominated by the intrinsic Berry-curvature mechanism. First-principles calculations identify CoRuFeSi as a topologically nontrivial nodal-line semimetal in its ordered phase. Incorporation of experimentally relevant Co--Ru antisite disorder redistributes the Berry curvature and quantitatively reproduces the experimentally observed anomalous Hall conductivity, while preserving half-metallicity. These results establish CoRuFeSi as a disorder-tolerant half-metallic ferromagnet with a sizable intrinsic anomalous Hall effect at room temperature, highlighting its potential for spintronic and Hall-based device applications.