Effect of uniaxial compressive stress on polarization switching and domain wall formation in tetragonal phase BaTiO3 via machine learning potential

Po-Yen Chen; Teruyasu Mizoguchi

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arXiv · 2601.12914

Effect of uniaxial compressive stress on polarization switching and domain wall formation in tetragonal phase BaTiO3 via machine learning potential

Po-Yen Chen·Teruyasu Mizoguchi

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Abstract

Ferroelectric materials such as BaTiO3 exhibit spontaneous polarization that can be reoriented by an external electric field, forming the basis of various memory, actuator, and sensor applications. The polarization switching behavior, however, is strongly influenced by mechanical boundary conditions due to the intrinsic electromechanical coupling in ferroelectrics. In this study, we employ a machine learning interatomic potential to investigate the effect of uniaxial compressive stress on polarization switching and domain wall evolution in the tetragonal phase of BaTiO3. This study revealed a critical stress about 120 MPa which 90 degree polarization switching occurs. Beyond the critical stress, larger supercells exhibit lower activation energies for polarization switching with 180-degree domain wall formation and weaker constraints from periodic boundary conditions, thereby facilitating domain-wall formation. Besides, Increasing compressive stress reduces both the remnant polarization and the coercive field, while a double hysteresis loop emerges at a stress level of 80 MPa. These findings provide atomistic insights into stress-controlled ferroelectric switching and highlight the crucial role of mechanical loading in designing reliable ferroelectric devices.

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Po-Yen Chen, Teruyasu Mizoguchi. 2026-01-19. Effect of uniaxial compressive stress on polarization switching and domain wall formation in tetragonal phase BaTiO3 via machine learning potential. https://arxiv.org/abs/2601.12914

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