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arXiv · 2601.14551

Heterogeneous Transfer of Thin Film BaTiO$_3$ onto Silicon for Device Fabrication

Temazulu S. Zulu·Larissa B. Little·Aaron M. Day·Chaoshen Zhang·Keith Powell·Kyeong-Yoon Baek·Benazir Fazlioglu-Yalcin·Neil Sinclair·Charles M. Brooks·David R. Barton·Marko Loncar·Julia A. Mundy
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Abstract

Thin film BaTiO$_3$ has one of the highest known Pockels coefficients (>1200 pm/V), making it an attractive material for use in electro-optic devices. It is advantageous to integrate BaTiO$_3$ on silicon to enable complementary metal-oxide-semiconductor (CMOS) compatible processing. However, synthesis of high-quality BaTiO$_3$ directly on silicon remains a challenge. Here, we synthesize BaTiO$_3$ using hybrid metal-organic molecular beam epitaxy (hMBE) and demonstrate its transfer onto silicon using thermocompression bonding and chemical lift-off. Hybrid metal-organic MBE enables self-regulated synthesis of highly stoichiometric thin films at high growth rates (>100nm/hr). Our transfer method results in millimeter-scale areas of atomically flat, crack-free BaTiO$_3$ making it a potentially scalable method. Finally, we demonstrate the applicability of our process to device fabrication through characterization of lithographically-patterned and etch-transferred sub-micron features.

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Temazulu S. Zulu, Larissa B. Little, Aaron M. Day, Chaoshen Zhang, Keith Powell, Kyeong-Yoon Baek, Benazir Fazlioglu-Yalcin, Neil Sinclair, Charles M. Brooks, David R. Barton, Marko Loncar, Julia A. Mundy. 2026-01-21. Heterogeneous Transfer of Thin Film BaTiO$_3$ onto Silicon for Device Fabrication. https://arxiv.org/abs/2601.14551

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