Impact of O concentration on the thermal stability and decomposition mechanism of (Cr,Al)N compared to (Ti,Al)N thin films

Abstract

The composition-dependent thermal stability of (Cr$_{0.47 \mp 0.03}$Al$_{0.53 \mp 0.03}$)$_{z}$(O$_{y}$N$_{1-y}$)$_{1-z}$ thin films with O concentrations of y = 0, 0.15, and 0.40 is investigated up to 1200 °C and then compared to (Ti$_{0.56}$Al$_{0.44}$)$_{z}$(O$_{y}$N$_{1-y}$)$_{1-z}$. X-ray diffraction reveals a thermal stability limit of 1150 °C independent of the O concentration, as witnessed by the formation of decomposition products, namely h-Cr$_{2}$N for (Cr$_{0.50}$Al$_{0.50}$)$_{0.49}$N$_{0.51}$ and c-Cr for both (Cr$_{0.48}$Al$_{0.52}$)$_{0.48}$(O$_{0.15}$N$_{0.85}$)$_{0.52}$ and (Cr$_{0.44}$Al$_{0.56}$)$_{0.46}$(O$_{0.40}$N$_{0.60}$)$_{0.54}$. Based on TEM and ERDA data, the thermal stability limit is extended to 1100 - 1150 °C. DFT calculations indicate that bond breaking limits the thermal stability. In (Cr,Al)N, N has the lowest activation energy for migration. Furthermore, the O vacancy formation energy is highest in (Cr,Al)(O,N). It has to be overcome to enable diffusion on the non-metal sublattice, which is necessary for forming decomposition products like w-AlN or c-Cr. However, once Cr-N bonds break, decomposition into h-Cr$_{2}$N and subsequent c-Cr together with N$_{2}$ is triggered. This results in N evaporation, generating sufficient non-metal vacancies that greatly enhance diffusion and render the extensive vacancy formation energies for non-metals irrelevant. This reduction of the activation energy for mass transport on the non-metal sublattice to the migration barrier causes the similar thermal stability in (Cr$_{0.47 \mp 0.03}$Al$_{0.53 \mp 0.03}$)$_{z}$(O$_{y}$N$_{1-y}$)$_{1-z}$. In contrast, Al bonds break first without creating non-metal vacancies in (Ti,Al)(O,N). Thus, the high O vacancy formation energy in (Ti,Al)(O,N) significantly increases the thermal stability compared to (Ti,Al)N as well as the here investigated films.