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arXiv · 2602.08841

Flash annealing-engineered wafer-scale relaxor antiferroelectrics for enhanced energy storage performance

Yizhuo Li·Kepeng Song·Meixiong Zhu·Xiaoqi Li·Zhaowei Zeng·KangMing Luo·Yuxuan Jiang·Zhe Zhang·Cuihong Li·Yujia Wang·Bing Li·Zhihong Wang·Zhidong Zhang·Weijin Hu
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Abstract

Dielectric capacitors are essential for energy storage systems due to their high-power density and fast operation speed. However, optimizing energy storage density with concurrent thermal stability remains a substantial challenge. Here, we develop a flash annealing process with ultrafast heating and cooling rates of 1000 oC/s, which facilitates the rapid crystallization of PbZrO3 film within a mere second, while locking its high-temperature microstructure to room temperature. This produces compact films with sub-grain boundaries fraction of 36%, nanodomains of several nanometers, and negligible lead volatilization. These contribute to relaxor antiferroelectric film with a high breakdown strength (4800 kV/cm) and large polarization (70 uC/cm2). Consequently, we have achieved a high energy storage density of 63.5 J/cm3 and outstanding thermal stability with performance degradation less than 3% up to 250 oC. Our approach is extendable to ferroelectrics like Pb(Zr0.52Ti0.48)O3 and on wafer scale, providing on-chip nonlinear dielectric energy storage solutions with industrial scalability.

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Yizhuo Li, Kepeng Song, Meixiong Zhu, Xiaoqi Li, Zhaowei Zeng, KangMing Luo, Yuxuan Jiang, Zhe Zhang, Cuihong Li, Yujia Wang, Bing Li, Zhihong Wang, Zhidong Zhang, Weijin Hu. 2026-02-09. Flash annealing-engineered wafer-scale relaxor antiferroelectrics for enhanced energy storage performance. https://doi.org/10.1126/sciadv.ady2349

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