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arXiv · 2603.02490

High-Stress Si3N4 Reflective Membranes Monolithically Integrated with Cavity Bragg Mirrors

Abstract

High-stress silicon nitride (Si3N4) membranes represent the state-of-the-art for cavity optomechanics, combining ultralow dissipation, optical transparency, and full compatibility with wafer-scale nanofabrication. Yet their integration into high-finesse optical cavities has remained difficult, typically requiring bonding or alignment-sensitive assembly that limits scalability and long-term stability. Here, we introduce a monolithic, wafer-level integration strategy that directly suspends high-stress Si3N4 photonic-crystal membranes above thermally compatible SiN/SiO2 distributed Bragg reflectors (DBRs) capable of withstanding the high temperatures required for stoichiometric Si3N4 growth. A defect-free amorphous-silicon sacrificial layer and stiction-free plasma undercut yield vertically coupled cavities with sub-micron spacing-forming self-aligned resonators within seconds of release. Owing to the intrinsic tensile stress, the suspended membranes exhibit atomic-scale sagging, ensuring near-ideal cavity parallelism and long-term stability. Optical reflectivity measurements reveal cavity finesse exceeding 800 with nanoscale gaps between mirrors. Mechanical ringdown measurements show Q > 10^5, indicating that DBR integration preserves the low-dissipation character of high-stress Si3N4. This demonstrates that the integration process preserves the material's exceptional dissipation dilution, supporting straightforward extension to high-Q nanomechanical architectures reported in the literature. The resulting Si3N4-DBR platform unites optical and mechanical coherence with high fabrication yield and design flexibility, enabling scalable optomechanical devices for precision sensing and quantum photonics.

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BibTeXRIS

Megha Khokhar, Lucas Norder, Paolo M. Sberna, Richard A. Norte. 2026-03-03. High-Stress Si3N4 Reflective Membranes Monolithically Integrated with Cavity Bragg Mirrors. https://arxiv.org/abs/2603.02490

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