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arXiv · 2603.29484

Thermal Conductivity and Temperature-Induced Band Gap Renormalization in Crystalline and Amorphous Ga$_2$O$_3$

Rustam Arabov·Jiaxuan Li·Xiaotong Chen·Nikita Rybin·Alexander Shapeev
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Abstract

The lattice thermal conductivity (LTC) and electron-phonon interactions in crystalline and amorphous gallium oxide are herein determined by coupling a machine-learned interatomic potential, namely the moment tensor potential (MTP) model, to first-principles calculations. Crystalline $β$-Ga$_2$O$_3$ exhibits a substantial band gap renormalization (BGR) of $\sim$0.45 eV at 700 K, with $\sim$0.2 eV caused by zero-point BGR. The computed temperature dependence of BGR induced by classical nuclear motion in $β$-Ga$_2$O$_3$ is stronger than that in amorphous Ga$_2$O$_3$, with the difference in BGR reaching $\sim$0.18 eV at 900 K. Thermal transport calculations reveal that the LTC of amorphous Ga$_2$O$_3$ remains near $0.9$ W$\cdot$ m$^{-1}$$\cdot$K$^{-1}$ for temperatures between 300 K and 700 K, which is approximately an order of magnitude lower than that of crystalline $β$-Ga$_2$O$_3$. Overall, the presented framework provides a computationally tractable and reliable route for predicting properties of semiconductors (both crystalline and amorphous) under operating conditions relevant to microelectronics and optoelectronics.

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Rustam Arabov, Jiaxuan Li, Xiaotong Chen, Nikita Rybin, Alexander Shapeev. 2026-06-24. Thermal Conductivity and Temperature-Induced Band Gap Renormalization in Crystalline and Amorphous Ga$_2$O$_3$. https://arxiv.org/abs/2603.29484

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