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arXiv · 2605.31206

In-situ operation of amorphous circuits under heavy-ion irradiation

Xuanzhe Sha·Shun Liao·Xiaoxi Li·Chengyuan Li·Jianli Liu·Yu Pan·Wenhai Wang·Yu Ye·Chengxin Zhao·Liyi Li·Hanwen Wang·Zheng Vitto Han·Jianming Lu
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Abstract

Radiation-hardened electronics using semiconductors beyond silicon are essential for computation and control in extreme environments. Yet complex digital circuits based on such material platforms operating in situ under heavy-ion irradiation remain largely unexplored. Here, we show a timing circuit based on amorphous thin-film semiconductors at the 100-transistor scale, and demonstrate its robust operation through a functional "Hello World" ASCII output sequence. Beyond static device characterization, we evaluate the circuit under powered heavy-ion irradiation using tantalum ions, providing an operationally relevant assessment of radiation tolerance at the system level. Under a high particle flux of 2.5 x 10^3 ions cm^-2 s^-1, the circuit maintains stable operation during the irradiation test, achieving a total fluence of 1 x 10^6 ions cm^-2, establishing a milestone of prolonged powered digital operation under extreme conditions. Our work expands the design space of radiation-tolerant electronics, highlighting amorphous semiconductors as a promising foundation for digital circuits deployed in harsh environments.

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Xuanzhe Sha, Shun Liao, Xiaoxi Li, Chengyuan Li, Jianli Liu, Yu Pan, Wenhai Wang, Yu Ye, Chengxin Zhao, Liyi Li, Hanwen Wang, Zheng Vitto Han, Jianming Lu. 2026-05-29. In-situ operation of amorphous circuits under heavy-ion irradiation. https://arxiv.org/abs/2605.31206

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