Microscopic origin of polytype-dependent melting in SiC revealed by machine-learning molecular dynamics

Abstract

Predicting how crystal structure influences high-temperature stability remains a key challenge in materials modelling and design. Silicon carbide (SiC), one of the most thermally and chemically stable materials known, provides an ideal system for studying this problem because its many polytypes preserve similar local tetrahedral bonding while differing in long-range stacking geometry. Here, we combine phase-coexistence machine-learning molecular dynamics with finite-temperature phonon analysis, enabled by a fine-tuned MACE interatomic potential that accurately describes crystalline, high-temperature, and disordered configurations across multiple SiC polytypes. We identify a clear relative stability ordering, 3C > 2H > 9R, reflected consistently in structural disordering, interlayer sliding, and finite-temperature phonon spectra. Across all polytypes, melting initiates through the formation of short C-C contacts and carbon-rich local regions, followed by a progressive loss of tetrahedral Si-C connectivity. The reduced stability of the long-period 9R polytype is traced to low-frequency transverse-acoustic shear modes associated with relative bilayer sliding, which are already present in the 0 K phonon spectra and soften further at high temperature. These modes generate larger lateral bilayer displacements, linking enhanced interlayer sliding to local chemical disordering and ultimately melting. More broadly, our results show that high-temperature stability in polytypic covalent materials is governed not only by local bond strength, but also by stacking-dependent transverse dynamics.