Enhanced Spin-to-Charge Conversion in Bi2Se3/NiFe via Interface Engineering with a Ti Spacer Layer

Abstract

Topological insulators have attracted significant attention in spintronics due to their topological surface states and spin-momentum-locking-driven spin-to-charge conversion. Among these, Bi2Se3 has been extensively investigated because of its large bulk bandgap and single Dirac cone band structure. However, spin-to-charge conversion strongly depends on the quality of the topological insulator/ferromagnet interface. Here, we investigate spin-to-charge conversion in a sputter-deposited heterostructure comprising a topological insulator (Bi2Se3) and a ferromagnetic NiFe thin film separated by a titanium spacer layer. The Bi2Se3 layer is deposited on a silicon substrate for industrial compatibility. Pure spin current is injected into the Bi2Se3 layer through the titanium spacer via spin pumping induced by spin precession during microwave-driven ferromagnetic resonance of the ferromagnetic film. Spin pumping studies are performed by varying the Bi2Se3 thickness. The Gilbert damping parameter exhibits a significant 55% increase at a Bi2Se3 thickness of 4 nm, indicating a pure surface-state contribution. The spin Hall angle, which quantifies the spin-to-charge conversion efficiency, increases by an order of magnitude upon insertion of the titanium spacer layer. This enhancement is attributed to the suppression of interdiffusion between the Bi2Se3 and NiFe layers by titanium, thereby preserving the topological surface states. These findings highlight the important role of titanium spacer layers in spintronic devices based on topological materials.