Single-Photon Infrared Imaging with a Silicon Camera Based on Long-Wavelength-Pumping Two-Photon Absorption

Abstract

We experimentally demonstrated an ultra-sensitive imaging system for telecom photons based on the non-degenerate two-photon absorption in a silicon-based electron multiplying charge-coupled device (EMCCD). The proposed long-wavelength-pumping scheme with mid-infrared pulsed excitation could not only effectively increase the two-photon absorption coefficient, but also significantly suppress the background noise caused by the harmonic absorption of the strong pumping field. In comparison to the photoelectric response via the degenerate two-photon absorption, the implemented configuration could offer over 30-folded enhancement of the photon-counting rate in the infrared imaging. The resulting detection sensitivity up to 1 photon/pixel/pulse was unprecedentedly approached, thus facilitating the single-photon operation. The elimination of the stringent phase matching as typically required in the optical parametric conversion has led to a high spatial resolution of 13 $μ$m. Moreover, the on-chip nonlinearity of the optical imager would enable a broadband spectral window and an enlarged field of view. In combination with the 5-ps temporal resolution due to the coincident optical gating, the presented imaging system would find various promising applications, such as low-light fluorescence lifetime microscopy and photon counting time-of-flight 3D imaging.