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arXiv · 2606.18903

First-Principles Study of Novel Lead-Free Double Perovskite \b{eta}2SnGeX6 (\b{eta} = K, Rb; X = Cl, Br, I) for thermomechanical, optoelectronic and outstanding thermoelectric applications

Abstract

In this study, the structural, mechanical, electronic, optical, and thermoelectric properties of the novel lead-free halide double perovskite series beta2SnGeX6 (beta = K, Rb; X = Cl, Br, I) are systematically investigated using density functional theory (DFT). Calculated formation energies, Tolerance factors, and octahedral factors confirm that all six compounds exhibit robust thermodynamic stability within a highly symmetric cubic geometry. Mechanical analysis derived from elastic parameters characterizes the entire series as fundamentally ductile, ensuring high processing elasticity and resistance to micro-cracking during device manufacturing. Electronic band structures reveal direct bandgaps showing exceptional composition-dependent tunability from 1.44 eV down to 0.64 eV via progressive halogen substitution. The wide gap chloride variations are optimized for single-junction photovoltaic absorbers, while the narrower-gap bromide and iodide analogs show immense promise for tandem solar architectures and near-infrared photodetectors. Thermoelectrically, heavy constituent atoms introduce strong lattice anharmonicity and intense high-temperature Umklapp phonon scattering, significantly suppressing lattice thermal conductivity. Combined with low carrier effective masses that optimize electrical transport, the iodide compounds achieve higher power factors and outstanding dimensionless figures of merit (ZT = 2.4 for K2SnGeI6 at 1000 K). Ultimately, these lead-free double perovskite family emerges as an environmentally benign and versatile platform for next-generation green optoelectronics and solid-state waste-heat recovery.

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BibTeXRIS

Jubair Hossan Abir, Tauhidur Rahman, S. S. B. Pallab, Md. Sharear Aman, R. S. Islam, S. H. Naqib. 2026-06-17. First-Principles Study of Novel Lead-Free Double Perovskite \b{eta}2SnGeX6 (\b{eta} = K, Rb; X = Cl, Br, I) for thermomechanical, optoelectronic and outstanding thermoelectric applications. https://arxiv.org/abs/2606.18903

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