Thickness-Dependent Interlayer Coupling and Semiconductor-to-Semimetal Crossover in Arsenene Multilayers

Abstract

Interlayer interactions in layered materials are often assumed to transfer from the bilayer to the bulk, but this assumption can fail when chemically active out-of-plane orbitals participate in bonding. We combine diffusion quantum Monte Carlo (DMC) and density functional theory (DFT) to determine how interlayer coupling evolves in arsenene multilayers. DMC shows that bulk gray arsenic is compact, whereas the corresponding few-layer structures remain at substantially larger interlayer separations despite sharing the same nominal A$_{1}$B$_{-1}$ adjacent-layer registry. Registry alone therefore does not determine the bonding regime; thickness and coordination reshape the interlayer interaction. Among the tested functionals, SCAN+rVV10 most closely reproduces DMC equilibrium separations and stacking energetics. Using the DMC-benchmarked SCAN+rVV10 calculations, we predict a thickness-driven stacking sequence from A$_{1}$A$_{1}$ to A$_{1}$B$_{1}$ and finally bulk-like A$_{1}$B$_{-1}$. The structural crossover coincides with a stacking-dependent DFT band-gap collapse driven by enhanced interlayer As p$_{z}$ hybridization.