Spin-related transport in a polycrystalline NiCo2O4 film: Drastic current-induced change in resistivity-temperature characteristics via spin injection

Abstract

We have studied spin-related transport in a polycrystalline NiCo2O4 (NCO) film on a MgAl2O4/Si(001) substrate, motivated by potential applications of the theoretical half-metallicity of NCO to Si-based high-performance spin-transport devices. Our approach is to systematically measure and analyze the temperature dependence of the film's resistivity ($ρ-T$) with various in-plane currents (100 nA$-$1 mA) and temperatures (4$-$290 K). With increasing current, the $ρ-T$ curve changes drastically from semiconducting ($dρ/dT<0$) to non-monotonic and eventually toward metallic ($dρ/dT>0$). A distinctive feature is that the single NCO film exhibits a $ρ-T$ characteristic of polycrystalline defective NCO at 100 nA, whereas it exhibits a $ρ-T$ characteristic of epitaxial less-defective NCO over a wide temperature range at 1 mA. This current-induced evolution of $ρ-T$ reflects the enhancement of the Curie temperature of defective regions near grain boundaries, accompanied by enhanced spin alignment there. We proposed a spin-related transport model that extends conventional hopping conduction models by incorporating the temperature- and current-dependent degree of spin alignment, as well as its spatial dependence inherent to polycrystalline NCO. This model comprehensively explains the interplay between the spin-alignment profile and transport mechanism. The analysis reveals that spin injection from grain bodies to grain boundaries enhances the spin alignment there and strengthens double-exchange interactions, facilitating conduction. This phenomenon strongly depends on both temperature and current. Our findings provide evidence of spin-polarized electrons inside the grain bodies, highlighting the potential of our polycrystalline NCO film as an efficient spin source. The present model is further supported by current$-$voltage and magnetoresistance features.