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arXiv · 2607.05314

High-temperature operation of III-nitride high-electron-mobility transistors

Yi-Chen Liu·Jacklyn Zhu·John Niroula·Hridibrata Pal·Tomas Palacios·Savannah R. Eisner
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Abstract

High-electron-mobility transistors (HEMTs) made with III-nitride materials are of potential use in high-temperature electronic applications including power electronics, communications, aerospace and space exploration. However, the demands of such applications make it essential to understand the thermal limits and performance evolution of III-nitride HEMTs. Here, we analyze the high-temperature operation of III-nitride HEMTs, examining the impact on material properties, device structure, and circuit-level behavior. We explore the role of critical device layers - including barrier and channel engineering, substrate selection, and passivation strategies - in mitigating high-temperature-induced effects, and evaluate the thermal stability of III-nitride HEMTs in logic, radiofrequency, and power electronics applications. We also highlight key remaining challenges in the design and optimization of III-nitride devices for high-temperature applications.

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Yi-Chen Liu, Jacklyn Zhu, John Niroula, Hridibrata Pal, Tomas Palacios, Savannah R. Eisner. 2026-07-06. High-temperature operation of III-nitride high-electron-mobility transistors. https://doi.org/10.1038/s41928-026-01570-y

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