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arXiv · 2607.17905

Localized crystallization of Ce:YIG thin films on Si using CO2 laser annealing for integrated nonreciprocal photonic device applications

Xinran Ji·Junxian Wang·Tianchi Zhang·Xuan Zhao·Di Wu·Zixuan Wei·Yizhi Chen·Jialong Wang·Lei Bi
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Abstract

Laser annealing (LA) technique has emerged as an effective method for localized crystallization of magneto-optical (MO) garnet thin films on semiconductor substrates. However, no studies have explored the crystallization and magneto-optical (MO) properties of cerium-substituted yttrium iron garnet (Ce:YIG, Ce1Y2Fe5O12) thin films for integrated photonic device applications using LA technique. In this study, we provide a comprehensive investigation into the laser annealing of Ce:YIG films deposited on SiO2 substrates and silicon nitride photonic waveguides for integrated nonreciprocal photonic device applications. Garnet phase was successfully observed in films grown on SiO2 substrates, and SiN waveguides with laser annealing of sputtered Ce:YIG films on top of a laser annealed Y3Fe5O12 seed layer. The magneto-optical (MO) properties of Ce:YIG films on oxidized Si substrates were found to be comparable to those prepared by rapid thermal annealing (RTA). A Mach-Zehnder Interferometer (MZI) type optical isolator based on Ce:YIG film on SiN was fabricated, exhibiting a saturation Faraday rotation of -2317.7 deg/cm and propagation loss of 188.2 dB/cm. Isolation ratio of 27.1 dB and insertion loss of 10.1 dB were achieved at 1552.7 nm wavelength.

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Xinran Ji, Junxian Wang, Tianchi Zhang, Xuan Zhao, Di Wu, Zixuan Wei, Yizhi Chen, Jialong Wang, Lei Bi. 2026-07-20. Localized crystallization of Ce:YIG thin films on Si using CO2 laser annealing for integrated nonreciprocal photonic device applications. https://arxiv.org/abs/2607.17905

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