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arXiv · 2608.07823

Sn-Doping in LPCVD-Grown (010) $β$-Ga$_2$O$_3$ Films

Saleh Ahmed Khan·Ahmed Ibreljic·Sourav Sarker·Anhar Bhuiyan
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Abstract

In this work, Sn-doped (010) $β$-Ga$_2$O$_3$ homoepitaxial films were grown by low-pressure chemical vapor deposition (LPCVD), and the influence of Sn incorporation on their structural, morphological, and electrical properties was systematically investigated. Controlled room-temperature carrier concentrations ranging from $1.17 \times 10^{17}$ to $3.06 \times 10^{18}$ cm$^{-3}$ were achieved, with corresponding Hall mobilities decreasing from 113 to 63 cm$^2$ V$^{-1}$ s$^{-1}$. The films exhibited the monoclinic $β$-Ga$_2$O$_3$ phase, near-stoichiometric composition, and well-defined step-flow morphology, with a minimum rocking-curve FWHM of 68.4 arcsec and an RMS roughness of 2.63 nm. Film thicknesses ranging from 1.66 to 11.3 $μ$m were obtained at growth rates of 6.4 to 16.6 $μ$m h$^{-1}$, demonstrating the ability of LPCVD to produce thick epitaxial layers. The sample with a room-temperature carrier concentration of $1.17 \times 10^{17}$ cm$^{-3}$ exhibited room-temperature and low-temperature Hall mobilities of 113 cm$^2$ V$^{-1}$ s$^{-1}$ and 380 cm$^2$ V$^{-1}$ s$^{-1}$ at 84 K, respectively. Both represent the highest reported values for LPCVD-grown Sn-doped $β$-Ga$_2$O$_3$. Transport modeling of the same sample yielded a shallow donor activation energy of 32.7 meV, a deeper donor level at 95 meV, and a low compensating acceptor concentration of $2.0 \times 10^{16}$ cm$^{-3}$, indicating efficient donor activation and a low degree of compensation. These results demonstrate that LPCVD enables controlled Sn doping while maintaining excellent structural and electrical quality, providing a viable route for realizing thick $β$-Ga$_2$O$_3$ epitaxial drift layers.

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Saleh Ahmed Khan, Ahmed Ibreljic, Sourav Sarker, Anhar Bhuiyan. 2026-08-07. Sn-Doping in LPCVD-Grown (010) $β$-Ga$_2$O$_3$ Films. https://arxiv.org/abs/2608.07823

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