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arXiv · 2609.06927

Self-Trapping Enabled Highly Bright Momentum-Indirect Interlayer Excitons

Dong Yang·Zisheng Gong·Hao Wen·Yue Hu·Kaichen Jiang·Baixu Xiang·Weibo Gao·Qihua Xiong·Dehui Li
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Abstract

Interlayer excitons in two dimensional material heterostructures exhibit large exciton binding energies and long lifetimes, making them ideal platforms for studying excitonic devices and many body quantum phenomena. However, the spatially separated electron and hole nature of IXs reduces their oscillator strength by two orders of magnitude compared to intralayer excitons. Achieving high efficiency IX emission remains challenging and requires optimal material selection with appropriate momentum matching and meticulous device fabrication. Here we demonstrate a highly bright momentum indirect IX emission within heterostructures formed between 2D perovskites and monolayer transition metal dichalcogenides. The quantum yield of IX emission reaches 35.2% on average, over 50 times higher than that of the corresponding constituent TMD monolayer, with the highest value exceeding 60%. Notably, the radiative recombination efficiency of this momentum indirect IX exceeds that of momentum direct IXs in monolayer TMD-based heterostructures by two orders of magnitude. We suggest that the remarkably bright IX emission in our heterostructure originates from IX self trapping, induced by strong exciton phonon coupling arising from the soft lattice nature of the 2D perovskite. Our findings provide new insights into achieving high IX emission efficiency and open new avenues for exploring long lifetime excitonic devices.

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Dong Yang, Zisheng Gong, Hao Wen, Yue Hu, Kaichen Jiang, Baixu Xiang, Weibo Gao, Qihua Xiong, Dehui Li. 2026-09-07. Self-Trapping Enabled Highly Bright Momentum-Indirect Interlayer Excitons. https://arxiv.org/abs/2609.06927

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