Band Structure Modulation in Ternary-Based InAs/ AlAs1-xSbx /InAs1-xSbx Superlattices

Arash Dehzangi; Jiakai Li

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arXiv · 2610.04308

Band Structure Modulation in Ternary-Based InAs/ AlAs1-xSbx /InAs1-xSbx Superlattices

Arash Dehzangi·Jiakai Li

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Abstract

This study demonstrates an overall view of recent quantum mechanical based modeling effort using empirical tight-binding method to expand the ability of calculation of electronic band structure for strained-layer superlattices composed of ternary InAs/InAs1-xSbx and InAs/InAs1-xSbx/AlAs1-xSbx materials. Using a modified sp3s* empirical tight-binding method and building the superlattice Hamiltonian, we demonstrate that combining the virtual crystal approximation with a bowing parameter for the s-on-site energy accurately predicts ternary superlattice behavior. We provide a comprehensive overview of our numerical simulations, which model diverse superlattice configurations ranging from long wavelength infrared range to wide-bandgap barrier architectures. Notably, the simulated energy levels strongly agree with experimental bandgap measurements of the ternary superlattices and their structural variants.

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Arash Dehzangi, Jiakai Li. 2026-10-03. Band Structure Modulation in Ternary-Based InAs/ AlAs1-xSbx /InAs1-xSbx Superlattices. https://arxiv.org/abs/2610.04308

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