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arXiv · 2610.17535

Electric Edelstein Effect in Two Dimensions

Xiaoran Lv·Tianqi Zhang·Chaoxi Cui·Yaling Li·Yi Shen·Weikang Wu·Ziming Zhu·Yugui Yao·Zhi-Ming Yu
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Abstract

We propose the electric Edelstein effect (EEE) in two-dimensional (2D) systems, where crossed out-of-plane and in-plane electric fields generate a spin polarization. The gate field converts the Edelstein response from a material-fixed spin polarization into a gate-tunable one. A symmetry analysis over all magnetic layer point groups shows that the EEE is allowed in a wide range of magnetic and nonmagnetic systems, including ferromagnets, antiferromagnets, and altermagnets. The EEE plays two distinct roles: it generates spin polarization where the linear Edelstein effect (EE) is symmetry-forbidden, as in centrosymmetric materials; and it adds a new gate-tunable component, generally non-collinear with the conventional one, where the EE is already present. The two fields then act as independent knobs and raise the control dimension of the spin polarization from one to two. Our microscopic theory traces the EEE to band-geometric quantities, which are strongly enhanced near small band gaps. First-principles calculations predict pronounced effects in the centrosymmetric ferromagnet MnSe2, where the linear EE is symmetry-forbidden. In the nonmagnet SnSe where the EE and EEE coexist, the two knobs cover an extended region of the spin sphere. Our findings establish the EEE as a symmetry-guided, gate-tunable route to electrical spin manipulation and open avenues for multistate spintronics in 2D quantum materials.

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Xiaoran Lv, Tianqi Zhang, Chaoxi Cui, Yaling Li, Yi Shen, Weikang Wu, Ziming Zhu, Yugui Yao, Zhi-Ming Yu. 2026-10-13. Electric Edelstein Effect in Two Dimensions. https://arxiv.org/abs/2610.17535

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