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Pattern Competition in the Photorefractive Semiconductors

Yuo-Hsien Shiau·Chin-Kun Hu
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Abstract

We analytically study the photorefractive Gunn effect in n-GaAs subjected to two external laser beams which form a moving interference pattern (MIP) in the semiconductor. When the intensity of the spatially independent part of the MIP, denoted by $I_0$, is small, the system has a periodic domain train (PDT), consistent with the results of linear stability analysis. When $I_0$ is large, the space-charge field induced by the MIP will compete with the PDT and result in complex dynamics, including driven chaos via quasiperiodic route.

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Yuo-Hsien Shiau, Chin-Kun Hu. 2001-01-05. Pattern Competition in the Photorefractive Semiconductors. https://doi.org/10.1143/jpsj.70.3636

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