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Characterization of one-dimensional quantum channels in InAs/AlSb

C. H. Yang·M. J. Yang·K. A. Cheng·J. C. Culbertson
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Abstract

We report the magnetoresistance characteristics of one-dimensional electrons confined in a single InAs quantum well sandwiched between AlSb barriers. As a result of a novel nanofabrication scheme that utilizes a 3nm-shallow wet chemical etching to define the electrostatic lateral confinement, the system is found to possess three important properties: specular boundary scattering, a strong lateral confinement potential, and a conducting channel width that is approximately the lithography width. Ballistic transport phenomena, including the quenching of the Hall resistance, the last Hall plateau, and a strong negative bend resistance, are observed at 4K in cross junctions with sharp corners. In a ring geometry, we have observed Aharonov-Bohm interference that exhibits characteristics different from those of the GaAs counterpart due to the ballistic nature of electron transport and the narrowness of the conducting channel width.

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C. H. Yang, M. J. Yang, K. A. Cheng, J. C. Culbertson. 2002-08-13. Characterization of one-dimensional quantum channels in InAs/AlSb. https://doi.org/10.1103/physrevb.66.115306

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