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Core-level spectroscopy of Si/SiO_2 quantum wells: evidence for confined states

Pierre Carrier·Zheng-Hong Lu·M. W. Chandre Dharma-wardana·Laurent J. Lewis
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Abstract

We present an experimental and theoretical study of the conduction states of crystalline Si films confined within amorphous SiO_2 barriers, using the Si-2p core-level excitations. The spectral peaks near the conduction band minimum are compared with the bulk silicon spectrum. In the Si quantum wells, it is found that the conduction band minimum and the low-lying peaks undergo a blue shift while all higher peaks remain unshifted. The experimental results are supported by calculations using recent first-principles structural models for Si/SiO_2 superlattices. The experimental results suggest that all conduction states up to a given conduction band offset become confined and blue-shifted while those at higher energies are not confined and undergo no shift. These results provide unambiguous evidence that the visible-light emitting properties of Si/SiO_2 structures depend strongly on electron confinement effects.

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Pierre Carrier, Zheng-Hong Lu, M. W. Chandre Dharma-wardana, Laurent J. Lewis. 2002-08-27. Core-level spectroscopy of Si/SiO_2 quantum wells: evidence for confined states. https://arxiv.org/abs/cond-mat/0208525

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