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Surface Chemistry and Electrical Properties of Germanium Nanowires

Dunwei Wang·Ying-Lan Chang·Qian Wang·Jien Cao·Damon Farmer·Roy Gordon·Hongjie Dai
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Abstract

Germanium nanowires with p- and n-dopants were synthesized by chemical vapor deposition and used to construct complementary field effect transistors . Electrical transport and x-ray photoelectron spectroscopy data are correlated to glean the effects of Ge surface chemistry to the electrical characteristics of GeNWs. Large hysteresis due to water molecules strongly bound to GeO2 on GeNWs is revealed. Different oxidation behavior and hysteresis characteristics and opposite band bending due to Fermi level pinning by interface states between Ge and surface oxides are observed for p- and n-type GeNWs. Vacuum annealing above 400C is used to remove surface oxides and eliminate hysteresis in GeNW FETs. High-k dielectric HfO2 films grown on clean GeNW surfaces by atomic layer deposition (ALD) using an alkylamide precursor is effective serving as the first layer of surface passivation. Lastly, the depletion length along the radial direction of nanowires is evaluated. The result suggests that surface effects could be dominant over the bulk properties of small diameter wires.

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Dunwei Wang, Ying-Lan Chang, Qian Wang, Jien Cao, Damon Farmer, Roy Gordon, Hongjie Dai. 2004-07-08. Surface Chemistry and Electrical Properties of Germanium Nanowires. https://arxiv.org/abs/cond-mat/0407186

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