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Influence of Grain size on the Electrical Properties of ${\rm Sb_2Te_3}$ Polycrystalline Films

P. Arun·A. G. Vedeshwar
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Abstract

Resistance of vacuum deposited ${\rm Sb_2Te_3}$ films of thickness between 100-500nm has been measured in vacuum. It is found that the resistance of the polycrystalline films strongly depends on the grain size and inter-granular voids. The charge carrier are shown to cross this high resistivity inter- granular void by ohmic conduction. The barrier height as well as temperature coefficient of resistance are also shown to depend on the grain size and inter- grain voids.

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P. Arun, A. G. Vedeshwar. 2004-08-05. Influence of Grain size on the Electrical Properties of ${\rm Sb_2Te_3}$ Polycrystalline Films. https://arxiv.org/abs/cond-mat/0408116

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