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Effect of Strain Relaxation on Magnetotransport properties of epitaxial La_0.7Ca_0.3MnO_3 films

P. K. Siwach·H. K. Singh·O. N. Srivastava
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Abstract

In this paper, we have studied the effect of strain relaxation on magneto-transport properties of La_0.7Ca_0.3MnO_3 epitaxial films (200 nm thick), which were deposited by pulsed laser deposition technique under identical conditions. All the films are epitaxial and have cubic unit cell. The amount of strain relaxation has been varied by taking three different single crystal substrates of SrTiO_3, LaAlO_3 and MgO. It has been found that for thicker films the strain gets relaxed and produces variable amount of disorder depending on the strength of strain relaxation. The magnitude of lattice relaxation has been found to be 0.384, 3.057 and 6.411 percent for film deposited on SrTiO_3, LaAlO_3 and MgO respectively. The films on LaAlO_3 and SrTiO_3 show higher T_{IM} of 243 K and 217 K respectively as compared to T_{IM} of 191 K for the film on MgO. Similarly T_C of the films on SrTiO_3 and LaAlO_3 is sharper and has value of 245 K and 220 K respectively whereas the TC of the film on MgO is 175 K. Higher degree of relaxation creates more defects and hence TIM (T_C) of the film on MgO is significantly lower than of SrTiO_3 and LaAlO_3. We have adopted a different approach to correlate the effect of strain relaxation on magneto-transport properties of LCMO films by evaluating the resistivity variation through Mott's VRH model. The variable presence of disorder in these thick films due to lattice relaxation which have been analyzed through Mott's VRH model provides a strong additional evidence that the strength of lattice relaxation produces disorder dominantly by increase in density of defects such as stacking faults, dislocations, etc. which affect the magneto-transport properties of thick epitaxial La_0.7Ca_0.3MnO_3 films.

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P. K. Siwach, H. K. Singh, O. N. Srivastava. 2005-03-30. Effect of Strain Relaxation on Magnetotransport properties of epitaxial La_0.7Ca_0.3MnO_3 films. https://doi.org/10.1088/0953-8984%2F18%2F43%2F002

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