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The Effect of Transfer Printing on Pentacene Thin-Film Crystal Structure

Y. Shao·S. A. Solin·D. R. Hines·E. D. Williams
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Abstract

The thermal deposition and transfer Printing method had been used to produce pentacene thin-films on SiO2/Si and plastic substrates (PMMA and PVP), respectively. X-ray diffraction patterns of pentacene thin films showed reflections associated with highly ordered polycrystalline films and a coexistence of two polymorph phases classified by their d-spacing, d(001): 14.4 and 15.4 A.The dependence of the c-axis correlation length and the phase fraction on the film thickness and printing temperature were measured. A transition from the 15.4 A phase towards 14.4 A phase was also observed with increasing film thickness. An increase in the c-axis correlation length of approximately 12% ~16% was observed for Pn films transfer printed onto a PMMA coated PET substrate at 100~120 C as compared to as-grown Pn films on SiO2/Si substrates. The transfer printing method is shown to be an attractive for the fabrication of pentacene thin-film transistors on flexible substrates partly because of the resulting improvement in the quality of the pentacene film.

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Y. Shao, S. A. Solin, D. R. Hines, E. D. Williams. 2006-02-06. The Effect of Transfer Printing on Pentacene Thin-Film Crystal Structure. https://doi.org/10.1063/1.2336301

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