Search arXiv⌕ Search
Home/Archive/arXiv

arXiv · cond-mat/0602317

Discrimination and analysis of interactions in non-contact Scanning Force Microscopy

Elisa Palacios-Lidon·Jaime Colchero
View original source ↗Read source document ↗Export metadata ↓

Abstract

A method for the separation and quantitative characterization of the electrostatic and Van der Waals contribution to tip-sample interaction in non-contact Scanning Force Microscopy is presented. It is based on the simultaneous measurement of cantilever deflection, oscillation amplitude and frequency shift as a function of tip-sample voltage and tip-sample distance as well as on advanced data processing. Data is acquired at a fixed lateral position as interaction images with the bias voltage as fast scan and tip-sample distance as slow scan. Due to the quadratic dependence of the electrostatic interaction with tip-sample voltage the Van der Waals force can be separated from the electrostatic force. Using appropriate data-processing the Van der Waals interaction, the capacitance as well as the contact potential can be determined as a function of tip-sample distance from the force as well as from the frequency shift data. The measurement of resonance frequency shift yields very high signal to noise ratio and the absolute calibration of the measured quantities, while the acquisition of cantilever deflection allows the determination of tip-sample distance. The separation and quantitative analysis of Van der Waals and electrostatic interaction as proposed in the present work results in precise and reproducible measurement of tip-sample interaction that will significantly improve the interpretation of SFM data and will substantially contribute to the characterization of nanoscale properties by SFM.

Explore related subjects

cond-mat.mtrl-sci

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Elisa Palacios-Lidon, Jaime Colchero. 2006-03-01. Discrimination and analysis of interactions in non-contact Scanning Force Microscopy. https://doi.org/10.1088/0957-4484%2F17%2F21%2F033

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Electronic States, Spin-Orbit Coupling and Magnetism in Germanium 60° Dislocations

Defects in semiconductors have recently attracted renewed interest owing to their potential in novel quantum applications. Here we investigate the electronic and magnetic properties induced by 60° dislocations in Ge. Using large-scale DFT calculations, we determine the band structure for both the shuffle and glide sets in their lowest-energy configurations. The band structure for the shuffle set reveals defect-induced dispersive bands localized within the band gap near the $Γ$ point, whereas for the glide set, we observe strong overlap with the conduction band. Defect-induced band splitting evident away from $Γ$ reveals Rashba-Dresselhaus spin-orbit coupling, an effect previously reported only for screw dislocations. Remarkably, we find evidence that specific dislocation arrangements can stabilize antiferromagnetic ordering with sizable local magnetic moments and considerable exchange splitting between opposite spin states. These results uncover rich physics in Ge dislocations through the combination of spin-orbit coupling and magnetic ordering, potentially enabling novel defect-based functionalities in Ge devices.

cond-mat.mtrl-sci↗
arXiv2026

Thermal Hall resistivity and transverse entropy production in a phonon gas

Most theories of the phonon thermal Hall effect ignore phonon-phonon interactions. Here, by recalling the Senftleben-Beenakker effect in molecular gases, we argue that a magnetic field, by influencing collisions between neutral non-chiral [quasi-]particles, can induce a Hall response. Our study of two insulators with distinct crystal structures, layered honeycomb WS$_2$ and ferroelectric perovskite LiNbO$_3$, finds that $κ_{xx}$ and $κ_{xy}$ peak at nearly the same temperature in both materials, as reported in other insulators. We show that the amplitude of transverse thermal \emph{resistivity} in clean and simple insulators is of the order of $|W_\perp/B|\simeq \frac{e}{k_B u}$, where $e$ and $k_B$ are fundamental constants and $u$ is the binding energy density of the crystal. In complex and dirty insulators, $|W_\perp/B|$ is much larger and has a significant temperature dependence. Nevertheless, the peak thermal Hall \textit{angle} in all insulators remains roughly the same.

cond-mat.mtrl-sci↗
arXiv2026

First-principles calculations of electronic structure

The emergence of high-mobility at provides a fertile platform for exploring emergent quantum phenomena and next-generation oxide electronics. Here, using first-principles density functional theory (DFT) calculations, we uncover the microscopic origin of the formed at the interface between insulators. Despite both constituents being insulating in bulk, the heterostructure develops robust metallicity at the interface, in agreement with experimental observations. This charge redistribution stabilizes at the interface. The electronic states forming enforcing carrier motion strictly within the interfacial plane. Remarkably, the spin-up parabolic band hosting the 2DEG exhibits an exceptionally small effective mass -- indicating the potential for significantly enhanced carrier mobility. Furthermore, the calculated interfacial electron density exceeds that of by nearly an order of magnitude, consistent with experimental measurement. These findings identify the heterostructure as a compelling platform for realizing and open new avenues for engineering correlated oxide interfaces for quantum electronic applications.

cond-mat.mtrl-sci↗