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Large magnetoresistance in La2/3Ca1/3MnO3 thin films induced by metal masked ion damage technique

M. J. Zhang·J. Li·Z. H. Peng·D. N. Zheng·A. Z. Jin·C. Z. Gu
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Abstract

e have developed a simple process to obtain large magnetoresistance (MR) in perovskite manganite thin films by a combination of focused ion beam (FIB) milling and 120 keV H$_{2}^{+}$ ion implantation. Metal slits about 70 nm in width were printed by 30 kV focused Ga ion beam nanolithography on a 4 mm track, and the materials in these slits are then irradiated by the accelerated H$_{2}^{+}$ ions. Using this method, in a magnetic field of 5 T we can get a MR${>}$60% over a 230 K temperature scope, with a maximum value of 95% at around 70 K. This technique is very promising in terms of its simplicity and flexibility of fabrication and has potential for high-density integration.

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M. J. Zhang, J. Li, Z. H. Peng, D. N. Zheng, A. Z. Jin, C. Z. Gu. 2006-03-09. Large magnetoresistance in La2/3Ca1/3MnO3 thin films induced by metal masked ion damage technique. https://doi.org/10.1063/1.2200883

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