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Out-of-plane magnetization reversal processes of (Ga,Mn)As with two different hole concentrations

K. Hamaya·T. Taniyama·Y. Yamazaki
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Abstract

We study magnetization reversal processes of in-plane magnetized (Ga,Mn)As epilayers with different hole concentrations in out-of-plane magnetic fields using magnetotransport measurements. A clear difference in the magnetization process is found in two separate samples with hole concentrations of 10^20 cm^-3 and 10^21 cm^-3 as the magnetization rotates from the out-of-plane saturation to the in-plane remanence. Magnetization switching process from the in-plane remanence to the out-of-plane direction, on the other hand, shows no hole concentration dependence, where the switching process occurs via domain wall propagation. We show that the balance of <100> cubic magnetocrystalline anisotropy and uniaxial [110] anisotropy gives an understanding of the difference in the out-of-plane magnetization processes of (Ga,Mn)As epilayers.

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K. Hamaya, T. Taniyama, Y. Yamazaki. 2006-03-22. Out-of-plane magnetization reversal processes of (Ga,Mn)As with two different hole concentrations. https://doi.org/10.1063/1.2194121

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