Search arXivSearch

arXiv · cond-mat/0607543

Electromechanical Detection in Scanning Probe Microscopy: Tip Models and Materials Contrast

Abstract

The rapid development of nanoscience and nanotechnology in the last two decades was stimulated by the emergence of scanning probe microscopy (SPM) techniques capable of accessing local material properties, including transport, mechanical, and electromechanical behavior on the nanoscale. Here, we analyze the general principles of electromechanical probing by piezoresponse force microscopy (PFM), a scanning probe technique applicable to a broad range of piezoelectric and ferroelectric materials. The physics of image formation in PFM is compared to Scanning Tunneling Microscopy and Atomic Force Microscopy in terms of the tensorial nature of excitation and the detection signals and signal dependence on the tip-surface contact area. It is shown that its insensitivity to contact area, capability for vector detection, and strong orientational dependence render this technique a distinct class of SPM. The relationship between vertical and lateral PFM signals and material properties are derived analytically for two cases: transversally-isotropic piezoelectric materials in the limit of weak elastic anisotropy, and anisotropic piezoelectric materials in the limit of weak elastic and dielectric anisotropies. The integral representations for PFM response for fully anisotropic material are also obtained. The image formation mechanism for conventional (e.g., sphere and cone) and multipole tips corresponding to emerging shielded and strip-line type probes are analyzed. Resolution limits in PFM and possible applications for orientation imaging on the nanoscale and molecular resolution imaging are discussed.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Eugene A. Eliseev, Sergei V. Kalinin, Stephen Jesse, Svetlana L. Bravina, Anna N. Morozovska. 2006-07-21. Electromechanical Detection in Scanning Probe Microscopy: Tip Models and Materials Contrast. https://doi.org/10.1063/1.2749463

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Electronic States, Spin-Orbit Coupling and Magnetism in Germanium 60° Dislocations

Defects in semiconductors have recently attracted renewed interest owing to their potential in novel quantum applications. Here we investigate the electronic and magnetic properties induced by 60° dislocations in Ge. Using large-scale DFT calculations, we determine the band structure for both the shuffle and glide sets in their lowest-energy configurations. The band structure for the shuffle set reveals defect-induced dispersive bands localized within the band gap near the $Γ$ point, whereas for the glide set, we observe strong overlap with the conduction band. Defect-induced band splitting evident away from $Γ$ reveals Rashba-Dresselhaus spin-orbit coupling, an effect previously reported only for screw dislocations. Remarkably, we find evidence that specific dislocation arrangements can stabilize antiferromagnetic ordering with sizable local magnetic moments and considerable exchange splitting between opposite spin states. These results uncover rich physics in Ge dislocations through the combination of spin-orbit coupling and magnetic ordering, potentially enabling novel defect-based functionalities in Ge devices.

cond-mat.mtrl-sci

Thermal Hall resistivity and transverse entropy production in a phonon gas

Most theories of the phonon thermal Hall effect ignore phonon-phonon interactions. Here, by recalling the Senftleben-Beenakker effect in molecular gases, we argue that a magnetic field, by influencing collisions between neutral non-chiral [quasi-]particles, can induce a Hall response. Our study of two insulators with distinct crystal structures, layered honeycomb WS$_2$ and ferroelectric perovskite LiNbO$_3$, finds that $κ_{xx}$ and $κ_{xy}$ peak at nearly the same temperature in both materials, as reported in other insulators. We show that the amplitude of transverse thermal \emph{resistivity} in clean and simple insulators is of the order of $|W_\perp/B|\simeq \frac{e}{k_B u}$, where $e$ and $k_B$ are fundamental constants and $u$ is the binding energy density of the crystal. In complex and dirty insulators, $|W_\perp/B|$ is much larger and has a significant temperature dependence. Nevertheless, the peak thermal Hall \textit{angle} in all insulators remains roughly the same.

cond-mat.mtrl-sci

First-principles calculations of electronic structure

The emergence of high-mobility at provides a fertile platform for exploring emergent quantum phenomena and next-generation oxide electronics. Here, using first-principles density functional theory (DFT) calculations, we uncover the microscopic origin of the formed at the interface between insulators. Despite both constituents being insulating in bulk, the heterostructure develops robust metallicity at the interface, in agreement with experimental observations. This charge redistribution stabilizes at the interface. The electronic states forming enforcing carrier motion strictly within the interfacial plane. Remarkably, the spin-up parabolic band hosting the 2DEG exhibits an exceptionally small effective mass -- indicating the potential for significantly enhanced carrier mobility. Furthermore, the calculated interfacial electron density exceeds that of by nearly an order of magnitude, consistent with experimental measurement. These findings identify the heterostructure as a compelling platform for realizing and open new avenues for engineering correlated oxide interfaces for quantum electronic applications.

cond-mat.mtrl-sci