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Doping dependence of thermopower and thermoelectricity in strongly correlated systems

Subroto Mukerjee·J. E. Moore
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Abstract

The search for semiconductors with high thermoelectric figure of merit has been greatly aided by theoretical modeling of electron and phonon transport, both in bulk materials and in nanocomposites. Recent experiments have studied thermoelectric transport in ``strongly correlated'' materials derived by doping Mott insulators, whose insulating behavior without doping results from electron-electron repulsion, rather than from band structure as in semiconductors. Here a unified theory of electrical and thermal transport in the atomic and ``Heikes'' limit is applied to understand recent transport experiments on sodium cobaltate and other doped Mott insulators at room temperature and above. For optimal electron filling, a broad class of narrow-bandwidth correlated materials are shown to have power factors (the electronic portion of the thermoelectric figure of merit) as high at and above room temperature as in the best semiconductors.

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Subroto Mukerjee, J. E. Moore. 2006-09-07. Doping dependence of thermopower and thermoelectricity in strongly correlated systems. https://doi.org/10.1063/1.2712775

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