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Pressure on charged domain walls and additional imprint mechanism in ferroelectrics

P. Mokry·A. K. Tagantsev·J. Fousek
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Abstract

The impact of free charges on the local pressure on a charged ferroelectric domain wall produced by an electric field has been analyzed. A general formula for the local pressure on a charged domain wall is derived considering full or partial compensation of bound polarization charges by free charges. It is shown that the compensation can lead to a very strong reduction of the pressure imposed on the wall from the electric field. In some cases this pressure can be governed by small nonlinear effects. It is concluded that the free charge compensation of bound polarization charges can lead to substantial reduction of the domain wall mobility even in the case when the mobility of free charge carriers is high. This mobility reduction gives rise to an additional imprint mechanism which may play essential role in switching properties of ferroelectric materials. The effect of the pressure reduction on the compensated charged domain walls is illustrated for the case of 180-degree ferroelectric domain walls and of 90-degree ferroelectric domain walls with the head-to-head configuration of the spontaneous polarization vectors.

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P. Mokry, A. K. Tagantsev, J. Fousek. 2007-02-15. Pressure on charged domain walls and additional imprint mechanism in ferroelectrics. https://doi.org/10.1103/physrevb.75.094110

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