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Absence of ferromagnetism in V-implanted ZnO single crystals

Shengqiang Zhou·K. Potzger·H. Reuther·K. Kuepper·W. Skorupa·M. Helm·J. Fassbender
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Abstract

The structural and magnetic properties of V doped ZnO are presented. V ions were introduced into hydrothermal ZnO single crystals by ion implantation with fluences of 1.2*10^16 to 6*10^16 cm^-2. Post-implantation annealing was performed in high vacuum from 823 K to 1023 K. The ZnO host material still partly remains in a crystalline state after irradiation, and is partly recovered by annealing. The V ions show a thermal mobility as revealed by depth profile Auger electron spectroscopy. Synchrotron radiation x-ray diffraction revealed no secondary phase formation which indicates the substitution of V onto Zn site. However in all samples no pronounced ferromagnetism was observed down to 5 K by a superconducting quantum interference device magnetometer.

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Shengqiang Zhou, K. Potzger, H. Reuther, K. Kuepper, W. Skorupa, M. Helm, J. Fassbender. 2006-12-14. Absence of ferromagnetism in V-implanted ZnO single crystals. https://doi.org/10.1063/1.2710802

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