Search arXivSearch

arXiv · cond-mat/0612392

Structure and optical properties of alpha- and gamma-cerium sesquisulfide

Abstract

Structural and electronic properties of the alpha- and gamma-phases of cerium sesquisulfide, Ce2S3, are examined by first-principles calculations using the GGA+U extension of density functional theory. The strongly correlated f-electrons of Ce are described by a Hubbard-type on-site Coulomb repulsion parameter. A single parameter of $U^/prime$=4 eV yields excellent results for crystal structures, band gaps, and thermodynamic stability for both Ce2S3 allotropes. This approach gives insights in the difference in color of brownish-black alpha-Ce2S3 and dark red gamma-Ce2S3. The calculations predict that both Ce2S3 modifications are insulators with optical gaps of 0.8 eV (alpha-phase) and 1.8 eV (gamma-phase). The optical gaps are determined by direct electronic excitations at k=Gamma from localized and occupied Ce 4f-orbitals into empty Ce 5d-states. The f-states are situated between the valence and conduction bands. The difference of 1 eV between the optical gaps of the two Ce2S3 modifications is explained by different coordinations of the cerium cations by sulfur anions. For both Ce2S3 modifications the calculations yield an effective local magnetic moment of 2.6 $mu_B$ per cerium cation, which is in agreement with measurements. The electronic energy of the alpha-phase is computed to be 6 kJ/mol lower than that of the gamma-phase, which is consistent with the thermodynamic stability of the two allotropes.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Rene Windiks, Erich Wimmer, Leonid Pourovskii, Silke Biermann, Antoine Georges. 2006-12-15. Structure and optical properties of alpha- and gamma-cerium sesquisulfide. https://arxiv.org/abs/cond-mat/0612392

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Electronic States, Spin-Orbit Coupling and Magnetism in Germanium 60° Dislocations

Defects in semiconductors have recently attracted renewed interest owing to their potential in novel quantum applications. Here we investigate the electronic and magnetic properties induced by 60° dislocations in Ge. Using large-scale DFT calculations, we determine the band structure for both the shuffle and glide sets in their lowest-energy configurations. The band structure for the shuffle set reveals defect-induced dispersive bands localized within the band gap near the $Γ$ point, whereas for the glide set, we observe strong overlap with the conduction band. Defect-induced band splitting evident away from $Γ$ reveals Rashba-Dresselhaus spin-orbit coupling, an effect previously reported only for screw dislocations. Remarkably, we find evidence that specific dislocation arrangements can stabilize antiferromagnetic ordering with sizable local magnetic moments and considerable exchange splitting between opposite spin states. These results uncover rich physics in Ge dislocations through the combination of spin-orbit coupling and magnetic ordering, potentially enabling novel defect-based functionalities in Ge devices.

cond-mat.mtrl-sci

Thermal Hall resistivity and transverse entropy production in a phonon gas

Most theories of the phonon thermal Hall effect ignore phonon-phonon interactions. Here, by recalling the Senftleben-Beenakker effect in molecular gases, we argue that a magnetic field, by influencing collisions between neutral non-chiral [quasi-]particles, can induce a Hall response. Our study of two insulators with distinct crystal structures, layered honeycomb WS$_2$ and ferroelectric perovskite LiNbO$_3$, finds that $κ_{xx}$ and $κ_{xy}$ peak at nearly the same temperature in both materials, as reported in other insulators. We show that the amplitude of transverse thermal \emph{resistivity} in clean and simple insulators is of the order of $|W_\perp/B|\simeq \frac{e}{k_B u}$, where $e$ and $k_B$ are fundamental constants and $u$ is the binding energy density of the crystal. In complex and dirty insulators, $|W_\perp/B|$ is much larger and has a significant temperature dependence. Nevertheless, the peak thermal Hall \textit{angle} in all insulators remains roughly the same.

cond-mat.mtrl-sci

First-principles calculations of electronic structure

The emergence of high-mobility at provides a fertile platform for exploring emergent quantum phenomena and next-generation oxide electronics. Here, using first-principles density functional theory (DFT) calculations, we uncover the microscopic origin of the formed at the interface between insulators. Despite both constituents being insulating in bulk, the heterostructure develops robust metallicity at the interface, in agreement with experimental observations. This charge redistribution stabilizes at the interface. The electronic states forming enforcing carrier motion strictly within the interfacial plane. Remarkably, the spin-up parabolic band hosting the 2DEG exhibits an exceptionally small effective mass -- indicating the potential for significantly enhanced carrier mobility. Furthermore, the calculated interfacial electron density exceeds that of by nearly an order of magnitude, consistent with experimental measurement. These findings identify the heterostructure as a compelling platform for realizing and open new avenues for engineering correlated oxide interfaces for quantum electronic applications.

cond-mat.mtrl-sci