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AC-coupled GaAs microstrip detectors with a new type of integrated bias resistors

R. Irsigler·R. Geppert·R. Goeppert·M. Hornung·J. Ludwig·M. Rogalla·K. Runge·Th. Schmid·A. Soldner-Rembold·M. Webel·C. Weber
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Abstract

Full size single-sided GaAs microstrip detectors with integrated coupling capacitors and bias resistors have been fabricated on 3'' substrate wafers. PECVD deposited SiO_2 and SiO_2/Si_3N_4 layers were used to provide coupling capacitaces of 32.5 pF/cm and 61.6 pF/cm, respectively. The resistors are made of sputtered CERMET using simple lift of technique. The sheet resistivity of 78 kOhm/sq. and the thermal coefficient of resistance of less than 4x10^-3 / degree C satisfy the demands of small area biasing resistors, working on a wide temperature range.

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R. Irsigler, R. Geppert, R. Goeppert, M. Hornung, J. Ludwig, M. Rogalla, K. Runge, Th. Schmid, A. Soldner-Rembold, M. Webel, C. Weber. 1997-09-30. AC-coupled GaAs microstrip detectors with a new type of integrated bias resistors. https://doi.org/10.1016/s0168-9002(98)00007-2

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