arXiv subjects

Kenji Watanabe

Publications and source records attributed to Kenji Watanabe.

At least 253 records · Page 14Linked to original sources

arXiv2026

Field-induced asymmetric band flattening and ideal quantum geometry in rhombohedral graphene

Rhombohedral graphene exhibits an exceptionally diverse array of correlated phases that depend sensitively on the displacement field. Compiling reported phases into a unified phase diagram reveals a pronounced field-dependent electron-hole asymmetry: correlated states on the hole-doped side emerge at small displacement fields, whereas the fractional quantum anomalous Hall effect (FQAHE) is observed exclusively on the electron-doped side under large displacement fields. This stark asymmetry highlights the need to understand how flat bands evolve with displacement fields. Here, we directly visualize the field-induced electron-hole asymmetric band flattening in rhombohedral pentalayer graphene (R5G) using nanospot angle-resolved photoemission spectroscopy with electrostatic gating. Beyond gap opening and spectral weight redistribution indicative of layer polarization, the gating field drives a strongly asymmetric modification of the flat bands: the flat valence band (FVB) evolves into an M-shaped dispersion at high field, whereas the flat conduction band (FCB) progressively flattens with increasing field. Comparison with calculations identifies critical parameters governing the band curvature of R5G, from which the resulting finite Berry curvature and near-ideal quantum geometry support the emergence of topological phases under electron doping at large fields. These results establish a direct link between the asymmetric phase diagram, band structure evolution, and quantum geometry, providing a microscopic framework for understanding correlated and topological phases in rhombohedral graphene.

cond-mat.mes-hall↗

arXiv2026

Valley-controlled many-body exciton interactions in monolayer WSe$_2$ phototransistors

Many-body exciton interactions shape the optoelectronic response of atomically-thin transition metal dichalcogenides, yet optical control of these interactions remains largely unexplored. To date, modulation of exciton-exciton interactions has primarily relied on electrical gating or van der Waals engineering. Here, we demonstrate all-optical control of many-body exciton interactions in monolayer WSe$_2$ via valley-selective excitation using polarization-resolved pulsed-laser photocurrent spectroscopy. Circular excitation selectively populates excitons in a single valley, whereas linear excitation populates both valleys, inducing a valley-dependent nonlinear photoresponse. We observe helicity-dependent exciton renormalization, alongside a two-fold enhancement of sublinear photocurrent scaling under circular excitation, reflecting single-valley population of interacting excitons. A microscopic model incorporating intervalley-exchange and exciton-exciton annihilation mediated by dark and bright exciton populations reproduces the nonlinear valley-selective response. These results establish the valley degree of freedom as an all-optical control parameter for tuning many-body excitonic effects and, exploring correlated exciton states and valleytronic applications in two-dimensional semiconductors.

cond-mat.mes-hall↗

arXiv2026

Strain Correlated Linearly Polarized Photoluminescence in WS2/WSe2 Moiré Superlattices

Reliable optical control of valley degrees of freedom in moiré excitons requires that the emitted polarization faithfully reflect the underlying valley state. Here, we show that linearly polarized photoluminescence from WSe2/WS2 moiré excitons is largely insensitive to the excitation polarization and therefore does not arise from valley coherence. Automated polarization-resolved photoluminescence and Raman mapping at cryogenic temperature reveals that the degree of linear polarization correlates strongly with local Raman shifts and moiré-exciton observables, identifying strain as the dominant experimental correlate. Linear-regression analysis further shows that strain-related descriptors provide the best prediction of the observed polarization. Guided by theory, we attribute this behavior to strain-amplified breaking of C3 symmetry in the moiré potential: weak uniaxial strain produces only partial cancellation of locally elliptical emission, yielding a finite far-field degree of linear polarization. These results establish strain as a key control parameter for reliable optical readout in TMD moiré superlattices.

cond-mat.mtrl-sci↗

arXiv2026

Chern number reversal and emergent superconductivity in rhombohedral graphene induced by in-plane magnetic fields

Rhombohedral graphene with topological flat bands offers an ideal platform for realizing correlated and topological quantum phases. Here we investigate hBN aligned eight-layer rhombohedral graphene moire superlattices, which host a robust quantum anomalous Hall (QAH) state alongside three unconventional superconducting phases. For electron-doped carriers away from the moire potential, we observe QAH Chern number reversal driven by the displacement fields and in plane magnetic fields. For hole-doped carriers near the moire superlattice, the three superconducting phases exhibit distinctively different in plane magnetic field responses: one is weakly enhanced, the second is strongly suppressed, and the third exclusively induced by in plane magnetic field. The isotropic in plane magnetic field response in the QAH regime points to interplay between orbital magnetism and spin-orbit coupling, and the field-emergent superconductivity provides compelling evidence for spin-triplet pairing. Our work demonstrates a highly versatile platform for coexisting topological and superconducting states, and highlights in plane magnetic field as a powerful in-situ control knob for engineering novel quantum devices.

cond-mat.str-el↗

arXiv2026

Spin-coherence characterization of boron vacancy defects in hexagonal boron nitride with broadband microwave pulses

Negatively charged boron vacancy (VB-) defects in hexagonal boron nitride (hBN) are promising for nanoscale-proximity quantum sensing. To evaluate their performance, it is important to characterize the spin coherence times T2* and T2. In this study, we realized sub-GHz Rabi oscillations of VB- using an isotopically enriched hBN thin film directly stamped onto a narrow gold wire. Using these strong microwave pulses, we performed Ramsey interference and Hahn echo measurements. The Ramsey interference signal showed Gaussian-like decay, yielding T2* = 13.8 ns. The Hahn echo measurement gave T2 = 108.7 ns and a stretch factor of α= 1.25. These results experimentally clarify the spin coherence properties of VB- and provide an effective method for evaluating the coherence of spin defects in van der Waals thin films with broad resonance linewidths.

cond-mat.mes-hall↗

arXiv2026

Tunable high-Chern-number Chern insulators in rhombohedral tetralayer graphene/hBN moiré superlattices

Moiré superlattices based on rhombohedral multilayer graphene have emerged as a highly tunable platform for engineering correlated topological phases. Here, we systematically investigate the transport properties of the hole-doped side in rhombohedral tetralayer graphene/ hexagonal boron nitride (hBN) moiré superlattices across a range of twist angles and alignment orientations. Notably, we observed multiple high-Chern-number Chern insulators, including the previously reported integer Chern insulator with Chern number C = -4 at moiré filling factor v = -1 and newly discovered symmetry-broken Chern insulating states with C = +3, $\pm$2, $\pm$1 at fractional moiré fillings of v = -2.5 or -2.6. These Chern insulating states emerge in both hBN alignment, but exhibit a sensitive moiré wavelength dependence. Our findings demonstrate the exceptional tunability of these high-Chern-number states via moiré wavelength, displacement electric field and external magnetic field, underscoring the distinct topological landscape realized in hole-doped RTG/hBN moiré superlattices.

cond-mat.mes-hall↗

arXiv2026

Ballistic Exciton Flow Driven by Intertwined Exciton-Electron Orders in a Moiré Superlattice

Moiré superlattices of transition-metal dichalcogenides (TMDs) host strongly interacting Bose-Fermi mixtures in which bosonic excitons coexist with correlated electron lattices. Using ultrafast, time- and energy-resolved photoluminescence (PL) and reflectance microscopy, we show that strong exciton-electron and exciton-exciton repulsion can enable collective ballistic exciton transport in a WSe$_2$/WS$_2$ heterobilayer. The ballistic transport is energy-selective: repulsive interactions drive excitons into a higher moiré exciton band, where enhanced intersite hopping enables rapid spatial expansion. Correspondingly, the exciton mean-squared displacement (MSD) exhibits a quadratic time dependence ($\propto t^2$). This ballistic expansion is enhanced at fractional electron fillings where the electrons form generalized Wigner-crystal (GWC) orders. Afterwards, the system transitions into a mixed electron-exciton Mott state as Auger recombination and density depletion conclude the ballistic expansion. A one-dimensional Bose-Fermi Hubbard model solved using density-matrix renormalization group (DMRG) qualitatively reproduces the measured exciton transport and time-dependent response. It further confirms that strong cross-species interactions allow the electron crystal to perforate the exciton Mott background, accelerating its melting and enhancing exciton motion. Our results establish moiré TMDs as highly tunable platforms for realizing strongly interacting Bose-Fermi mixtures, which we employ here to demonstrate real-time control of intertwined bosonic and electronic order and to establish a route to the exciton insulator-fluid transition.

cond-mat.str-el↗

arXiv2026

Doping-Induced Brightening of Dark Excitons and Trions in a WSe$_2$ Monolayer

Optically dark excitonic states play a critical role in the valleytronic, electronic, and optical properties of monolayer semiconducting transition metal dichalcogenides. Here, we investigate how electrostatic doping affects the in-plane magnetic-field-induced activation of dark excitonic complexes in a gated WSe$_2$ monolayer. By continuously tuning the carrier density via gate voltage, we access $n$-type, charge-neutral, and $p$-type regimes and track the corresponding brightening dynamics. We find that the brightening rates of the dark negative trion ($T^{D-}$), dark neutral exciton ($X^{D}$), and dark positive trion ($T^{D+}$) exhibit a strong and nontrivial dependence on doping. In particular, the pronounced asymmetry in the brightening behaviour of the neutral $X^{D}$ complex and the charged $T^{D-}$ and $T^{D+}$ trions reveals distinct underlying carrier interactions, which we describe using a rate-equation model for their steady-state populations. These findings highlight the key role of dark excitonic complexes in governing the optical response and carrier dynamics of doped S-TMD monolayers.

cond-mat.mes-hall↗

arXiv2026

Van Hove Singularity-Driven Topological Magnetism in Twisted MoTe2

Van Hove singularities (vHSs) strongly amplify electron interactions and can stabilize correlated phases in topological bands. Here we report signatures of topological magnetism in large-angle twisted bilayer MoTe2 driven by the interplay of vHSs, strong correlations, and valley topology. In a 4.8 degree device, electrostatic tuning to a vHS produces a spontaneous anomalous Hall hot spot near nu = -1. Combined transport and reflective magnetic circular dichroism measurements indicate that this regime is not governed by magnetization alone, but instead emerges from a correlated intervalley-coherent antiferromagnetic state that evolves with doping into a canted phase. With increasing magnetic field, the Hall response develops an additional finite-field component consistent with a topological Hall effect from a noncoplanar spin texture, before transitioning into a C = -1 Chern insulator. Our results establish tunable vHSs in moire topological bands as a route to chiral magnetism and engineering topological phase transitions.

cond-mat.mes-hall↗

arXiv2026

Record magnetoresistance, enhanced superconductivity, and fermiology in WTe2

The diverse electronic properties of transition metal chalcogenides can be very sensitive to crystal imperfections. A new crystal growth technique, known as horizontal flux transport, offers a route to improved crystal quality. By refining this technique and applying it to the topological semimetal WTe2, we achieved crystals with an order of magnitude less disorder as determined by electrical transport and scanning tunneling microscopy measurements. At low temperatures these crystals exhibit the largest magnetoresistance reported in a metal. Exfoliated monolayers show quantum oscillations for the first time in the electrostatically doped metallic states, enabling determination of band degeneracies and the valley splitting induced by an electric field. Moreover, they exhibit a gated superconducting dome with a greatly enhanced critical temperature approaching 1.8 K. This advance opens up new avenues for employing WTe2 in topological electronics and gated superconducting devices, and promises comparable breakthroughs with other chalcogenides.

cond-mat.supr-con↗

arXiv2026

High-Performance Near-Infrared Quantum Emission from Color Centers in hBN

Color centers hosted in hexagonal boron nitride have emerged as a highly promising platform for single-photon emission and spin-photon technologies relevant to quantum communication and quantum networking. As a wide-bandgap van der Waals material, hBN can host optically active quantum defects across a broad spectral range. Here, we demonstrate a simple and scalable oxygen-plasma process that reproducibly creates single quantum emitters in hBN with blinking-free zero-phonon lines spanning the near-infrared from 700 up to 971 nm. These emitters combine MHz-level brightness, single-photon purity up to 99.9\%, and ultranarrow cryogenic linewidths down to 2.7~GHz under quasi-resonant excitation, placing them in a particularly attractive regime for quantum photonics. Photostability measurements further reveal resistance to photobleaching, sub-nm spectral stability over long timescales, and near-shot-noise-limited intensity fluctuations. Analysis of the phonon sidebands shows weak vibronic coupling and ZPL-dominated emission, with Debye--Waller factors approaching 50\%. Control experiments together with EDS elemental mapping support oxygen incorporation as a necessary ingredient in activating the NIR emitter population, while first-principles calculations identify O$_N$V$_N$ and O$_N$V$_N$H as the leading defect candidates. These results establish a high-performance NIR quantum-emitter platform in hBN for free-space quantum networking and future integrated quantum-photonic architectures.

quant-ph↗

arXiv2026

Observation of Unconventional Ferroelectricity in Non-Moir'\e Graphene on Hexagonal Boron Nitride Boundaries and Interfaces

Interfacial interactions in two parallel-stacked hexagonal boron-nitride (hBN) layers facilitate sliding ferroelectricity, enabling novel device functionalities. Additionally, when Bernal or twisted bilayer graphene is aligned with an hBN layer, unconventional ferroelectric behavior was observed, though its precise origin remains unclear. Here, we propose an alternative approach to engineering such an unconventional ferroelectricity in graphene-hBN van der Waals (vdW) heterostructures by creating specific types of hBN boundaries and interfaces. We found that the unconventional ferroelectricity can occur--without the alignments at graphene-hBN or hBN-hBN interfaces--when there are hBN edges or interfaces with line defects. By systematically analyzing the gate dependence of mobile and localized charges, we identified key characteristics of localized states that underlie the observed unconventional ferroelectricity, informing future studies. These findings highlight the complexity of the interfacial interactions in graphene/hBN systems, and demonstrate the potential for defect engineering in vdW heterostructures.

cond-mat.mes-hall↗

arXiv2026

Persistence of large and gate-tunable anisotropic magnetoresistance in an atomically thin antiferromagnet

Anisotropic magnetoresistance (AMR) offers a robust electrical readout of antiferromagnetic (AFM) states, playing a central role in the rapidly advancing field of AFM spintronics. Despite its great versatility, electrical probing of the Néel vector via AMR remains challenging in the ultrathin limit due to interface disorder and reduced dimensionality. Here, we demonstrate electrical readout of the Néel vector down to 1.3 nm (two layers) in the two-dimensional van der Waals (vdW) AFM semiconductor NiPS3. Leveraging spin-flop-mediated rotation of the Néel vector and using both transistor and tunnel-junction device geometries, we identify two distinct AMR contributions in NiPS3, that dominate at low and high charge densities, respectively. We achieve full gate control over these contributions, enabling tunability of both the magnitude and sign of magnetoresistance. Our results establish semiconducting vdW antiferromagnets as a rich platform for studying AMR in the ultrathin limit, opening new avenues for multifunctional AFM spintronic devices.

cond-mat.mes-hall↗

arXiv2026

Directionally Locked Heteroepitaxy with a Structurally Modulated van der Waals Material

Precise orientation of symmetry-mismatched epilayers on van der Waals (vdW) substrates via heteroepitaxy has commonly been achieved through surface treatment processes to accommodate weak interlayer registry and bonding strength, thereby limiting the range of material combinations for heterostructure design. In this study, we investigate the influence of lattice instabilities in a structurally modulated vdW TaCo2Te2 substrate on the growth and alignment of a symmetry-mismatched bulk CoxTey epilayer using in situ heating in a transmission electron microscope (TEM). We show that a Peierls-like lattice instability occurs in TaCo2Te2 at a transition temperature of ~523 K, which was corroborated by phonon calculations. Post-heat-treated samples reveal a thermally induced surface diffusion process and the dominant lateral growth of the CoxTey epilayer on the TaCo2Te2 vdW layers, as observed in cross-sectional TEM images. Temperature-dependent selected area electron diffraction (SAED) patterns reveal that the quasi-vdW CoxTey/TaCo2Te2 heterointerface acquires directional locking by aligning larger interlayer lattice mismatch along the lattice instability axis of TaCo2Te2, while preserving a strong lattice matching along the orthogonal direction. This heterostructure exhibits precise interlayer registry with one-dimensional lattice incommensuration along the lattice instability axis, resulting from structural distortion to accommodate lattice-mismatch strain. Moreover, the interfacial reconstruction of TaCo2Te2 back to the distorted phase stabilizes the lattice-locking of the quasi-vdW heterointerface at elevated temperatures. These findings encourage the expansion of material diversity for designing and predicting novel multi-dimensional heterostructures by leveraging lattice instabilities to guide epitaxy.

cond-mat.mtrl-sci↗

arXiv2026

Continuous correlated states and dual-flatness in a moiré heterostructure

Many-body effects in condensed matter yield novel quantum states when the electronic density of states is enhanced. A vivid example is flat bands, which suppress kinetic energy and let interactions dominate, when they are filled with an integer number of electrons in moire systems. Yet flat bands and commensurate fillings are not the only conditions for correlated phenomena. Situations may occur where the band structure develops locally enhanced density of states, leading to strong correlations even at non-integer fillings, although such cases often yield pseudogaps that make detection elusive. Here we demonstrate that small-angle twisted monolayer-bilayer graphene combines moire-induced global flat band and additional local band flattening. Their coexistence allows direct comparison of correlated effects. The global route stabilizes commensurate states, while the local mechanism produces nearly flat bands, lifting degeneracy and generating symmetry breaking at non-integer fillings, yet without opening a global gap. Because there is no global gapped signature, the system remains metallic, but the effect reveals itself in anomalous Hall responses, signaling time-reversal symmetry breaking and valley polarization. Our results demonstrate dual-flatness as a guiding principle, extending moire physics beyond commensurate fillings and identifying topological transport as a probe of gapless correlated metals.

cond-mat.str-el↗

arXiv2026

Strain-Mediated Lattice Reconstruction Enhances Ferromagnetism in Cr2Ge2Te6/WTe2 van der Waals Heterobilayers

Van der Waals (vdW) heterostructures enable tailored electronic and magnetic phases by stacking atomically thin layers with pristine interfaces. Here, we investigate fully 2D Cr2Ge2Te6/WTe2 heterostructures and identify a strong enhancement of ferromagnetism in Cr2Ge2Te6 (CGT). Magnetotransport measurements across multiple devices with WTe2 thicknesses ranging from monolayer to bulk reveal a robust anomalous Hall effect together with a more than twofold increase of the Curie temperature and substantially enhanced coercive fields. Interface microscopy confirms chemically abrupt vdW interfaces with no detectable interdiffusion, while control experiments rule out processing- or stray-field-induced artifacts. Our experiments and theoretical calculations demonstrate that interfacial charge transfer renders CGT conductive and that proximity-induced lattice distortions in CGT enhance exchange and magnetocrystalline anisotropy. These results establish strain-mediated lattice reconstruction as a strategy for engineering high-temperature magnetic order in 2D heterostructures and clarify that modifications within the magnetic layer itself can govern proximity effects in vdW stacks.

cond-mat.mtrl-sci↗

arXiv2026

Polymer-free van der Waals assembly of 2D material heterostructures using muscovite crystals

The advent of van der Waals (vdW) heterostructures has enabled formation of bespoke materials with atomic precision, where numerous quantum and topological phenomena have already been discovered. This atomic-layer tunability, however, comes at a cost: individual 2D layers must be picked up, moved, and placed in a deterministic manner while keeping their interfaces atomically clean. Recent advances in machine learning and robotics place even stronger emphasis on the deterministic aspect of vdW assembly. Current polymer-based transfer methods satisfy neither the determinism nor cleanliness requirements. To this end, solutions are needed where adhesion can be dynamically and deterministically controlled without leaving organic contamination. Here, we present a polymer free transfer technique employing thin muscovite (mica) crystals. Temperature control over mica adhesion enables deterministic pick-up, stacking, and release of 2D materials, while their crystalline, inorganic nature ensures pristine interfaces and suppresses strain. Fully compatible with existing fabrication workflows, this approach enables the assembly of demanding vdW heterostructures, including those with exposed conductive layers, moiré superlattices and suspended membranes. Our method represents a promising strategy for vdW heterostructure fabrication toward its automatization.

cond-mat.mes-hall↗

arXiv2026

Excitonic Mott transition without population inversion

Exciton dissociation via the excitonic Mott transition (EMT) governs the high-density optical response of semiconductors and sets fundamental limits for optoelectronic devices. The EMT is conventionally linked to the onset of population inversion and the emergence of optical gain. Here, we demonstrate that this paradigm can break down under ultrafast non-equilibrium excitation. Using femtosecond pump-probe optical spectroscopy, we drive a monolayer transition metal dichalcogenide into a dense photoexcited state in which the excitonic resonance is completely quenched within ~100 fs, while the optical gain is entirely absent across the explored fluence range. State-of-the-art real-time ab initio simulations reveal that the EMT is governed by an interplay of strongly nonthermal carrier populations and nonequilibrium dynamical screening of the Coulomb interaction. The quantitative agreement between theory and experiment identifies a distinct, ultrafast pathway to exciton ionization beyond quasi-equilibrium descriptions and demonstrates that population inversion is not a universal prerequisite for the EMT.

cond-mat.mes-hall↗